Chip-Scale Graphene/IGZO Cold Source FET Array Enabling Sub-60 mV dec-1 Super-Steep Subthreshold Swing
© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 02. Sept., Seite e10618 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , , , , , , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2025
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article chip‐scale FET arrays cold‐source field‐effect transistor dirac‐cone‐type energy band structure graphene/IGZO sub‐60 mV dec−1 super‐steep subthreshold swing |
| Résumé: | © 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH. In this study, the first sub-60 mV dec-1 super-steep subthreshold swing (SS) of graphene/InGaZnO (IGZO) cold-source field-effect transistor (CSFET) arrays is demonstrated. The linear density of states of the Dirac-cone-type graphene suppresses the Boltzmann thermal tail near the graphene/IGZO interface which in turn causes super-exponentially decaying electron density with increasing energy, leading to an extremely low off current and SS value. In particular, by introducing an HfO2 high-k dielectric with a low body factor, the surface potential is effectively modulated, further reducing SS by ≈46.4 mV dec-1. Furthermore, highly uniform sub-60 mV dec-1 SS with a yield of ≈89.1% is achieved in the IGZO CSFET 8 × 8 array devices, with a record SS value of 23.66 mV dec-1 compared to previously reported oxide-semiconductor transistors. The proposed IGZO CSFET device is expected to drive significant advancements in high-speed and ultralow-power electronic circuits |
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| Description: | Date Revised 03.09.2025 published: Print-Electronic Citation Status Publisher |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202510618 |