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250903s2025 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202513265
|2 doi
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|a pubmed25n1554.xml
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|a (DE-627)NLM391619349
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|a (NLM)40843983
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Han, Meng
|e verfasserin
|4 aut
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| 245 |
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|a Asymmetric Stress Engineering of Dense Dislocations in Brittle Superconductors for Strong Vortex Pinning
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|c 2025
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 22.08.2025
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2025 Wiley‐VCH GmbH.
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|a Large lossless currents in high-temperature superconductors (HTS) critically rely on dense defects with suitable size and dimensionality to pin vortices, with dislocations being particularly effective due to their 1D geometry to interact extensively with vortex lines. However, in non-metallic compounds such as HTS with rigid lattices, conventional deformation methods typically lead to catastrophic fracture rather than dislocation-mediated plasticity, making it a persistent challenge to introduce dislocations at high density. Here, an asymmetric stress field strategy is proposed using extrusion to directly nucleate a high density of dislocations in HTS by activating shear-driven lattice slip and twisting under superimposed hydrostatic compression. As demonstrated in iron-based superconductors (IBS), atomic displacements of ≈1 Å trigger the formation of tilted dislocation lines with a density approaching that of metals. With further structural refinement, these dislocations serve as strong pinning centers that lead to a fivefold enhancement in the current-carrying capacity of IBS at 33 tesla (T), along with low anisotropy and a large irreversibility field. This work not only establishes a scalable route to engineer pinning landscapes in HTS but also offers a generalizable framework for manipulating dislocation structures in rigid crystalline systems
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|a Journal Article
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|a asymmetric stress field
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|a dislocation engineering
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|a iron‐based superconductors
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|a magnetic vortices pinnning
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|a rigid crystal lattice
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|a Dong, Chiheng
|e verfasserin
|4 aut
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|a Yao, Chao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Zhihao
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Qinghua
|e verfasserin
|4 aut
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| 700 |
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|a Gong, Yue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, He
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gong, Dongliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Dongliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xianping
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Fang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Yuping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Zengwei
|e verfasserin
|4 aut
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| 700 |
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|a Li, Jianqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Junyi
|e verfasserin
|4 aut
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| 700 |
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|a Awaji, Satoshi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xiaolin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Jianxin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hosono, Hideo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Yanwei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2025) vom: 22. Aug., Seite e13265
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g year:2025
|g day:22
|g month:08
|g pages:e13265
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|u http://dx.doi.org/10.1002/adma.202513265
|3 Volltext
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