Multifunctional Interfacial Molecular Bridging Strategy Enables Efficient and Stable Inverted Perovskite Solar Cells

© 2025 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 34 vom: 11. Aug., Seite e2508352
1. Verfasser: Li, Xinyue (VerfasserIn)
Weitere Verfasser: Xu, Zhaowei, Zhao, Rongmei, Ge, Shifeng, Liu, Tingfeng, Cai, Bing, Li, Mingliang, Zhang, Wen-Hua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article defect passivation energy band alignment interfacial molecular bridge perovskite solar cells stability
Beschreibung
Zusammenfassung:© 2025 Wiley‐VCH GmbH.
Interface engineering in inverted perovskite solar cells (PSCs) faces critical challenges arising from nonideal interfacial contact, defect accumulation, impeded carrier transport, and energy-level misalignment between the perovskite and electron transport layer, for example, phenyl-C61-butyric acid methyl ester (PCBM). These interfacial deficiencies collectively induce nonradiative recombination and degrade device stability. Herein, a multifunctional interfacial molecular bridging strategy using (benzhydrylthio)acetic acid (DSA) addresses the upper interfacial issues of inverted PSCs, achieving three synergistic roles. 1) Interfacial stabilization. A stable molecular-bridging layer is constructed with DSA at the perovskite/PCBM interface through carboxylate-Pb2⁺ coordination bonds, along with π-π stacking interactions between DSA and PCBM. 2) Defect passivation. Multiple active sites in DSA molecules, such as thioether and carboxylic acid groups, can synchronously achieve chemical passivation with undercoordinated Pb2+ sites. 3) Energy band alignment: DSA induces n-type band bending through electron donation by the thioether, reducing the work function and enhancing the electron-extraction kinetics. As a result, DSA-treated devices achieve a champion power conversion efficiency of 26.08% along with an open-circuit voltage loss of only 53 mV. Finally, the DSA-treated devices demonstrate remarkable operational stability, retaining 96% of the initial efficiency after being tracked at the maximum power point for 2000 h
Beschreibung:Date Revised 28.08.2025
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202508352