Strong Coupling of NiOx and Self-Assembled Molecules via Inserted Reductant for High-Performance Inverted Perovskite Solar Cells

Strong Coupling of NiOx and Self-Assembled Molecules via Inserted Reductant for High-Performance Inverted Perovskite Solar Cells

© 2025 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 11. Aug., Seite e10553
1. Verfasser: Chen, Hui (VerfasserIn)
Weitere Verfasser: Cao, Qi, Pu, Xingyu, Zhao, Qingyuan, He, Xilai, Zhou, Zihao, Wang, Tong, Feng, Guangpeng, Yin, Ranhao, Chen, Zhongwei, Tajibaev, Ilkhom, Boynazarov, Ilkhom, Bai, Yijun, Jia, Shiyao, Li, Xuanhua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article NiOx hole transport layer (HTL) integrated NiOx‐SAMs HTL inverted perovskite solar cells self‐assembled molecules (SAMs)
Beschreibung
Zusammenfassung:© 2025 Wiley‐VCH GmbH.
Self-assembled molecules (SAMs) deposited on nickel oxide (NiOx) are the basis for achieving high-performance inverted perovskite solar cells (PSCs). Unfortunately, the dissolution and redeposition of SAMs caused by the perovskite precursors leads to leaky monolayers, resulting in perovskite degradation and reduced stability. Here, a novel method is reported to realize strong coupling between NiOx and SAMs via inserted reductant [9tris(2-carboxyethyl)phosphine hydrochloride (TCEP)] for an integrated NiOx-SAMs hole transport layer (HTL). TCEP reduces NiOx and in situ forms C═O···Ni coordinated bond and O─H···O─Ni hydrogen bond, while its -COOH is connected with SAM's -PO(OH)2 by phosphonate and hydrogen bond, which improve the compactness of SAMs, thereby strengthening hole extraction and lowering interfacial non-radiative recombination. Simulation calculations demonstrate that the HTL strongly coupled by TCEP has a stronger adsorption energy, significantly improving device long-term stability. Therefore, the device based on integrated NiOx-SAMs HTL obtains a substantial efficiency of 26.34%. The devices maintain an impressive 97.5% of their original efficiency after 1000 h of operation under 1-sun illumination and 90.1% after 1000 h of thermal treatment at 85 °C in nitrogen atmosphere. This work offers new horizons for designing NiOx-based HTLs with high SAMs coverage for high-performance PSCs
Beschreibung:Date Revised 11.08.2025
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202510553