Anisotropy of Interfacial Bond-Induced Atom Removal Mechanisms of Silicon
Using chemical mechanical polishing (CMP) to flatten the surface of polycrystalline silicon wafers is a crucial step in semiconductor device manufacturing. The pending issue for such a process is the uneven surface removal during CMP of polycrystalline Si wafers. Such a phenomenon leads to the forma...
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Détails bibliographiques
| Publié dans: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 41(2025), 32 vom: 19. Aug., Seite 21859-21868
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| Auteur principal: |
Zhang, Diankai
(Auteur) |
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| Autres auteurs: |
Qin, Jie,
Wang, Yang,
Chen, Lei,
Xiao, Chen,
Franklin, Steven E,
Qian, Linmao |
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| Format: | Article en ligne
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| Langue: | English |
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| Publié: |
2025
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| Accès à la collection: | Langmuir : the ACS journal of surfaces and colloids
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| Sujets: | Journal Article |
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