Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 24. Juli, Seite e2506695
1. Verfasser: Henríquez-Guerra, Eudomar (VerfasserIn)
Weitere Verfasser: Ruiz, Alberto M, Galbiati, Marta, Cortés-Flores, Álvaro, Brown, Daniel, Zamora-Amo, Esteban, Almonte, Lisa, Shumilin, Andrei, Salvador-Sánchez, Juan, Pérez-Rodríguez, Ana, Orue, Iñaki, Cantarero, Andrés, Castellanos-Gomez, Andres, Mompeán, Federico, Garcia-Hernandez, Mar, Navarro-Moratalla, Efrén, Diez, Enrique, Amado, Mario, Baldoví, José J, Calvo, M Reyes
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article CrSBr magnetic 2D materials magnetic anisotropy magnetoresistance strain engineering
LEADER 01000naa a22002652c 4500
001 NLM390072273
003 DE-627
005 20250725232545.0
007 cr uuu---uuuuu
008 250725s2025 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202506695  |2 doi 
028 5 2 |a pubmed25n1507.xml 
035 |a (DE-627)NLM390072273 
035 |a (NLM)40708338 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Henríquez-Guerra, Eudomar  |e verfasserin  |4 aut 
245 1 0 |a Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr 
264 1 |c 2025 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 25.07.2025 
500 |a published: Print-Electronic 
500 |a Citation Status Publisher 
520 |a © 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH. 
520 |a Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the 2D limit. Here, it is demonstrated that compressive biaxial strain significantly enhances the magnetoresistance and magnetic anisotropy of few-layer CrSBr flakes. Strain is efficiently transferred to the flakes from the thermal compression of a polymeric substrate upon cooling, as confirmed by temperature-dependent Raman spectroscopy. This strain induces a remarkable increase in the magnetoresistance ratio and in the saturation fields required to align the magnetization of CrSBr along each of its three crystalographic directions, reaching a twofold enhancement along the magnetic easy axis. This enhancement is accompanied by a subtle reduction of the Néel temperature by ≈10 K. The experimental results are fully supported by first-principles calculations, which link the observed effects to a strain-driven modification in interlayer exchange coupling and magnetic anisotropy energy. These findings establish strain engineering as a key tool for fine-tuning magnetotransport properties in 2D magnetic semiconductors, paving the way for implementation in spintronics and information storage devices 
650 4 |a Journal Article 
650 4 |a CrSBr 
650 4 |a magnetic 2D materials 
650 4 |a magnetic anisotropy 
650 4 |a magnetoresistance 
650 4 |a strain engineering 
700 1 |a Ruiz, Alberto M  |e verfasserin  |4 aut 
700 1 |a Galbiati, Marta  |e verfasserin  |4 aut 
700 1 |a Cortés-Flores, Álvaro  |e verfasserin  |4 aut 
700 1 |a Brown, Daniel  |e verfasserin  |4 aut 
700 1 |a Zamora-Amo, Esteban  |e verfasserin  |4 aut 
700 1 |a Almonte, Lisa  |e verfasserin  |4 aut 
700 1 |a Shumilin, Andrei  |e verfasserin  |4 aut 
700 1 |a Salvador-Sánchez, Juan  |e verfasserin  |4 aut 
700 1 |a Pérez-Rodríguez, Ana  |e verfasserin  |4 aut 
700 1 |a Orue, Iñaki  |e verfasserin  |4 aut 
700 1 |a Cantarero, Andrés  |e verfasserin  |4 aut 
700 1 |a Castellanos-Gomez, Andres  |e verfasserin  |4 aut 
700 1 |a Mompeán, Federico  |e verfasserin  |4 aut 
700 1 |a Garcia-Hernandez, Mar  |e verfasserin  |4 aut 
700 1 |a Navarro-Moratalla, Efrén  |e verfasserin  |4 aut 
700 1 |a Diez, Enrique  |e verfasserin  |4 aut 
700 1 |a Amado, Mario  |e verfasserin  |4 aut 
700 1 |a Baldoví, José J  |e verfasserin  |4 aut 
700 1 |a Calvo, M Reyes  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2025) vom: 24. Juli, Seite e2506695  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g year:2025  |g day:24  |g month:07  |g pages:e2506695 
856 4 0 |u http://dx.doi.org/10.1002/adma.202506695  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |j 2025  |b 24  |c 07  |h e2506695