Bismuthene Under Cover Graphene Intercalation of a Large Gap Quantum Spin Hall Insulator

Bismuthene Under Cover : Graphene Intercalation of a Large Gap Quantum Spin Hall Insulator

© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 33 vom: 18. Aug., Seite e2502412
1. Verfasser: Gehrig, Lukas (VerfasserIn)
Weitere Verfasser: Schmitt, Cedric, Erhardt, Jonas, Liu, Bing, Wagner, Tim, Kamp, Martin, Moser, Simon, Claessen, Ralph
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D material bismuthene graphene intercalation quantum spin hall insulator topological insulator
Beschreibung
Zusammenfassung:© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
The quantum spin Hall insulator bismuthene, a two-third monolayer of bismuth on SiC(0001), is distinguished by helical metallic edge states that are protected by a groundbreaking 800 meV topological gap, making it ideal for room temperature applications. This massive gap inversion arises from a unique synergy between flat honeycomb structure, strong spin orbit coupling, and an orbital filtering effect that is mediated by the substrate. However, the rapid oxidation of bismuthene in air has severely hindered the development of applications, so far confining experiments to ultra-high vacuum conditions. Intercalating bismuthene between SiC and a protective sheet of graphene, this barrier is successfully overcome. As demonstrated by scanning tunneling microscopy and photoemission spectroscopy, graphene intercalation preserves the structural and topological integrity of bismuthene, while effectively shielding it from oxidation in air. Hereby, hydrogen is identified as the critical process gas that was missing in previous bismuth intercalation attempts. These findings facilitate ex-situ experiments and pave the way for the development of bismuthene based devices, signaling a significant step forward in the development of next-generation technologies
Beschreibung:Date Revised 23.08.2025
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202502412