Large Spin-Orbit Torque with Multi-Directional Spin Components in Ni4W

Large Spin-Orbit Torque with Multi-Directional Spin Components in Ni4W

© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 15. Mai, Seite e2416763
1. Verfasser: Yang, Yifei (VerfasserIn)
Weitere Verfasser: Lee, Seungjun, Chen, Yu-Chia, Jia, Qi, Dixit, Brahmdutta, Sousa, Duarte, Odlyzko, Michael, Garcia-Barriocanal, Javier, Yu, Guichuan, Haugstad, Greg, Fan, Yihong, Huang, Yu-Han, Lyu, Deyuan, Cresswell, Zach, Liang, Shuang, Benally, Onri Jay, Low, Tony, Wang, Jian-Ping
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article epitaxial growth field‐free switching spintronics spin‐orbit torque unconventional spin Hall effect
Beschreibung
Zusammenfassung:© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
Spin-orbit torque (SOT) offers an efficient mechanism for manipulating the magnetization of ferromagnetic materials in spintronics-based memory and logic devices. However, conventional SOT materials, such as heavy metals and topological insulators, are limited by high crystal symmetry to generating and injecting only in-plane spins into the ferromagnet. Low-symmetry materials and symmetry-breaking strategies have been employed to generate unconventional spin currents with out-of-plane spin polarization, enabling field-free deterministic switching of perpendicular magnetization. Despite this progress, the SOT efficiency of these materials has typically remained low. Here, a large SOT efficiency of 0.3 in the bulk Ni4W at room temperature is reported, as evaluated by second harmonic Hall measurements. In addition, due to the low crystal symmetry of Ni4W, unconventional SOT from the out-of-plane and Dresselhaus-like spin components are observed. Notably, a large SOT efficiency of 0.73 is observed in W/Ni4W (5 nm), potentially resulting from additional interfacial contributions or extrinsic effects. Furthermore, field-free switching of perpendicular magnetization has been achieved using the multi-directional SOT of Ni4W, highlighting its potential as a low-symmetry SOT material for energy-efficient spintronic devices
Beschreibung:Date Revised 15.05.2025
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202416763