Observation of Conductive Interstitial Ga Line Defects in β-Ga2O3
© 2025 Wiley‐VCH GmbH.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 21. Apr., Seite e2418230 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , , , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2025
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Ga vacancies line defects near‐field infrared characterization point defects wide‐bandgap semiconductors |
| Résumé: | © 2025 Wiley‐VCH GmbH. Beta-phase gallium sesquioxide (β-Ga2O3), possessing an ultrawide bandgap and high breakdown voltage, exhibits strong potential for deep-ultraviolet photodetection and high-power electronics. However, nanometer-scale line defects, prevalent in β-Ga2O3 growth, degrade device performance by increasing leakage currents and reducing breakdown voltages, thus termed "killer defects". Critically, the impact of these defects at the atomic scale remains unclear due to limited characterization and a lack of detailed understanding. Here, the observation of novel conductive atomic line defects is reported within β-Ga2O3 nanoflakes using near-field infrared imaging. Combining atomic-resolution imaging with density functional theory calculations, these defects are identified as interstitial Ga atoms migrating along the c-axis. These atomic line defects exhibit a broadband infrared response and quenched cathodoluminescence, indicative of significantly enhanced local conductivity. This elevated conductivity enables subsurface near-field detection of the defects and remote excitation of phonon polaritons in a hexagonal boron nitride (hBN) capping layer. These findings underscore the distinct conductivity of atomic-scale line defects, emphasizing the need for their controlled management during material synthesis and device fabrication, while simultaneously suggesting opportunities for their exploitation in nanophotonic applications |
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| Description: | Date Revised 22.04.2025 published: Print-Electronic Citation Status Publisher |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202418230 |