Modulating Trapping in Low-Dimensional Lead-Tin Halides for Energy-Efficient Neuromorphic Electronics

Modulating Trapping in Low-Dimensional Lead-Tin Halides for Energy-Efficient Neuromorphic Electronics

© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 31. März, Seite e2414430
1. Verfasser: Chen, Lijun (VerfasserIn)
Weitere Verfasser: Saleh, Saad, Tavormina, Filippo, Di Mario, Lorenzo, Li, Jiaxiong, Xie, Zhiqiang, Masciocchi, Norberto, Brabec, Christoph J, Koldehofe, Boris, Loi, Maria Antonietta
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D layered Pb─Sn perovskite analog CAM neuromorphic computing trap states
Beschreibung
Zusammenfassung:© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
Metal halide perovskites have drawn great attention for neuromorphic electronic devices in recent years, however, the toxicity of lead as well as the variability and energy consumption of operational devices still pose great challenges for further consideration of this material in neuromorphic computing applications. Here, a 2D Ruddlesden-Popper (RP) metal halides system of formulation BA2Pb0.5Sn0.5I4 (BA = n-butylammonium) is prepared that exhibits outstanding resistive switching memory performance after cesium carbonate (Cs2CO3) deposition. In particular, the device exhibits excellent switching characteristics (endurance of 5 × 105 cycles, ON/OFF ratio ≈105) and achieves 90.1% accuracy on the MNIST dataset. More importantly, a novel energy-efficient content addressable memory (CAM) architecture building on perovskite memristive devices for neuromorphic applications, called nCAM, is proposed, which has a minimum energy consumption of ≈0.025 fJ bit/cell. A mechanism involving the manipulation of trapping states through Cs2CO3 deposition is proposed to explain the resistive switching behavior of the memristive device
Beschreibung:Date Revised 31.03.2025
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202414430