Elimination of Concentration Polarization Under Ultra-High Current Density Zinc Deposition by Nanofluid Self-Driven Ion Enrichment

Elimination of Concentration Polarization Under Ultra-High Current Density Zinc Deposition by Nanofluid Self-Driven Ion Enrichment

© 2025 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 15 vom: 21. Apr., Seite e2419034
1. Verfasser: Gao, Na (VerfasserIn)
Weitere Verfasser: Cui, Manying, Xi, Kai, Deng, Teng, Yin, Dandan, He, Jingjie, Cui, Xiaofeng, Liu, Limin, Li, Weiping, Ding, Shujiang, Gao, Guoxin, Zhao, Hongyang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article concentration polarization depth of discharge nanofluid zinc metal batteries
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520 |a The commercialization of zinc metal batteries aims at high-rate capability and lightweight, which requires zinc anodes working at high current density, high areal capacity, and high depth of discharge. However, frequent zinc anode fades drastically under extreme conditions. Herein, it is revealed that the primary reason for the anode instability is the severe concentration polarization caused by the imbalanced consumption rate and transfer rate of Zn2+ under extreme conditions. Based on this finding, a nanofluid layer is constructed to rapidly absorb Zn2+ and mitigate the polarization induced by the nonlinear transport of interfacial ions. The modified zinc anode sustains at extreme conditions for over 1573 h (40 mA cm-2, 40 mAh cm-2, DOD = 75.97%) and 490 h (100 mA cm-2, 100 mAh cm-2, DOD = 90.91%), and achieving an unprecedented cumulative capacity of 62.92 Ah cm-2. This work offers both fundamental and practical insights for the interface design in energy storage devices 
650 4 |a Journal Article 
650 4 |a concentration polarization 
650 4 |a depth of discharge 
650 4 |a nanofluid 
650 4 |a zinc metal batteries 
700 1 |a Cui, Manying  |e verfasserin  |4 aut 
700 1 |a Xi, Kai  |e verfasserin  |4 aut 
700 1 |a Deng, Teng  |e verfasserin  |4 aut 
700 1 |a Yin, Dandan  |e verfasserin  |4 aut 
700 1 |a He, Jingjie  |e verfasserin  |4 aut 
700 1 |a Cui, Xiaofeng  |e verfasserin  |4 aut 
700 1 |a Liu, Limin  |e verfasserin  |4 aut 
700 1 |a Li, Weiping  |e verfasserin  |4 aut 
700 1 |a Ding, Shujiang  |e verfasserin  |4 aut 
700 1 |a Gao, Guoxin  |e verfasserin  |4 aut 
700 1 |a Zhao, Hongyang  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 37(2025), 15 vom: 21. Apr., Seite e2419034  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:37  |g year:2025  |g number:15  |g day:21  |g month:04  |g pages:e2419034 
856 4 0 |u http://dx.doi.org/10.1002/adma.202419034  |3 Volltext 
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