Studying novel high-pressure phases in laser-shock-affected silicon using poly : an algorithm for spot-wise phase identification

© Rasool Doostkam et al. 2025.

Détails bibliographiques
Publié dans:Journal of applied crystallography. - 1998. - 58(2025), Pt 1 vom: 01. Feb., Seite 128-137
Auteur principal: Doostkam, Rasool (Auteur)
Autres auteurs: Gelisio, Luca, Yurtsever, Aycan, Rapp, Ludovic, Rode, Andrei V, Beyerlein, Kenneth R
Format: Article en ligne
Langue:English
Publié: 2025
Accès à la collection:Journal of applied crystallography
Sujets:Journal Article electron diffraction laser–matter interaction phase identification polymorphism
LEADER 01000naa a22002652c 4500
001 NLM383991323
003 DE-627
005 20250507231135.0
007 cr uuu---uuuuu
008 250507s2025 xx |||||o 00| ||eng c
024 7 |a 10.1107/S1600576724011178  |2 doi 
028 5 2 |a pubmed25n1307.xml 
035 |a (DE-627)NLM383991323 
035 |a (NLM)39917184 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Doostkam, Rasool  |e verfasserin  |4 aut 
245 1 0 |a Studying novel high-pressure phases in laser-shock-affected silicon using poly  |b an algorithm for spot-wise phase identification 
264 1 |c 2025 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 08.02.2025 
500 |a published: Electronic-eCollection 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © Rasool Doostkam et al. 2025. 
520 |a Fast quenching dynamics in confined laser-induced microexplosions have been shown to lead to localized shockwaves that can create nanometre-scale domains in novel high-pressure crystalline phases. In the case of silicon, new silicon polymorphs such as bt8-Si and st12-Si have been recently observed, which are predicted to have bandgaps desirable for photovoltaic applications. Identification of these phases has been previously achieved by analysis of selected-area electron diffraction (SAED) patterns taken from laser-shock-affected areas. However, this analysis was complicated by pattern overlap from the many crystallites in the selected area, and many spots were found to agree with multiple potential phases. To overcome this ambiguity and enable the identification of the phase of Bragg spots observed in SAED patterns from polymorphic nanomaterials, we developed a new algorithm that we termed poly. This method is based on maximizing the magnitude and angular correlation between observed diffraction spots and those values derived from a known potential phase. We present the performance of this algorithm on simulated electron diffraction patterns as well as experimental SAED patterns measured from laser-shock-affected silicon samples. We find that the most abundant phases in the affected areas are t32-Si and t32*-Si and report on their relaxation into other high-pressure silicon phases over the course of 90 days after the laser-induced confined microexplosion 
650 4 |a Journal Article 
650 4 |a electron diffraction 
650 4 |a laser–matter interaction 
650 4 |a phase identification 
650 4 |a polymorphism 
700 1 |a Gelisio, Luca  |e verfasserin  |4 aut 
700 1 |a Yurtsever, Aycan  |e verfasserin  |4 aut 
700 1 |a Rapp, Ludovic  |e verfasserin  |4 aut 
700 1 |a Rode, Andrei V  |e verfasserin  |4 aut 
700 1 |a Beyerlein, Kenneth R  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Journal of applied crystallography  |d 1998  |g 58(2025), Pt 1 vom: 01. Feb., Seite 128-137  |w (DE-627)NLM098121561  |x 0021-8898  |7 nnas 
773 1 8 |g volume:58  |g year:2025  |g number:Pt 1  |g day:01  |g month:02  |g pages:128-137 
856 4 0 |u http://dx.doi.org/10.1107/S1600576724011178  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 58  |j 2025  |e Pt 1  |b 01  |c 02  |h 128-137