In Situ Formation of Ripplocations in Hybrid Organic-Inorganic MXenes

© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 13 vom: 31. Apr., Seite e2411669
1. Verfasser: Lagunas, Francisco (VerfasserIn)
Weitere Verfasser: Zhou, Chenkun, Wang, Di, Thakur, Anupma, Anasori, Babak, Talapin, Dmitri V, Hood, Zachary D, Klie, Robert F
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article in situ STEM MXenes Ripplocations cryogenic STEM electron energy loss spectroscopy (EELS) hybrid inorganic–organic materials
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520 |a Inorganic-organic hybrid MXenes (h-MXenes) are a family of 2D transition metal carbides and nitrides functionalized with alkylimido and alkylamido surface groups. Using cryogenic and room temperature scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS), it is shown that ripplocations, a form of a fundamental defect in 2D and layered structures, are abundant in this family of materials. Furthermore, detailed studies of electron probe sample interactions, focusing on structural deformations caused by the electron beam are presented. The findings indicate that at cryogenic temperatures (≈100 K) and below a specific dose threshold, the structure of h-MXenes remains largely intact. However, exceeding this threshold leads to electron beam-induced deformation through ripplocations. Interestingly, the deformation behavior, required dose, and resultant structure are highly dependent on temperature. At 100 K, it is demonstrated that the electron beam can induce ripplocations in situ with a high degree of precision 
650 4 |a Journal Article 
650 4 |a in situ STEM 
650 4 |a MXenes 
650 4 |a Ripplocations 
650 4 |a cryogenic STEM 
650 4 |a electron energy loss spectroscopy (EELS) 
650 4 |a hybrid inorganic–organic materials 
700 1 |a Zhou, Chenkun  |e verfasserin  |4 aut 
700 1 |a Wang, Di  |e verfasserin  |4 aut 
700 1 |a Thakur, Anupma  |e verfasserin  |4 aut 
700 1 |a Anasori, Babak  |e verfasserin  |4 aut 
700 1 |a Talapin, Dmitri V  |e verfasserin  |4 aut 
700 1 |a Hood, Zachary D  |e verfasserin  |4 aut 
700 1 |a Klie, Robert F  |e verfasserin  |4 aut 
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