Successive Reactions of Trimethylgermanium Chloride to Achieve > 26% Efficiency MA-Free Perovskite Solar Cell With 3000-Hour Unattenuated Operation

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 26. Dez., Seite e2414354
1. Verfasser: Li, Yong (VerfasserIn)
Weitere Verfasser: Xie, Zhuang, Duan, Yuwei, Li, Yongzhe, Sun, Yiqiao, Su, Chunbo, Li, Hongxiang, Sun, Rui, Cheng, Minghui, Wang, Hanye, Xu, Dongfang, Zhang, Ke, Wang, Yifan, Lei, Hongjie, Peng, Qiang, Guo, Kunpeng, Liu, Shengzhong, Liu, Zhike
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article crystallization processes high efficiency and stability perovskite solar cells successive interactions
LEADER 01000caa a22002652c 4500
001 NLM382123050
003 DE-627
005 20250307024514.0
007 cr uuu---uuuuu
008 241227s2024 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202414354  |2 doi 
028 5 2 |a pubmed25n1272.xml 
035 |a (DE-627)NLM382123050 
035 |a (NLM)39726335 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Li, Yong  |e verfasserin  |4 aut 
245 1 0 |a Successive Reactions of Trimethylgermanium Chloride to Achieve > 26% Efficiency MA-Free Perovskite Solar Cell With 3000-Hour Unattenuated Operation 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 27.12.2024 
500 |a published: Print-Electronic 
500 |a Citation Status Publisher 
520 |a © 2024 Wiley‐VCH GmbH. 
520 |a The rapidly increased efficiency of perovskite solar cells (PSCs) indicates their broad commercial prospects, but the commercialization of perovskite faces complex optimization processes and stability issues. In this work, a simple optimized strategy is developed by the addition of trimethylgermanium chloride (TGC) into FACsPbI3 precursor solution. TGC triggers the successive interactions in perovskite solution and film, involving the hydrolysis of vulnerable Ge─Cl bond forming Ge─OH group, then forming the hydrogen bonds (O─H···N and O─H···I) with FAI. These successive interactions effectively safeguard FA+ from decomposition, accelerate crystallization, restrict ion migration, and passivate film defects. Thus, a high-quality perovskite is obtained with the super-hydrophobic surface, maintaining the light-active phase (α-phase) even after exposure to high-humidity air (RH: 85%) for 10 days. Consequently, the TGC-treated conventional (n-i-p) and inverted (p-i-n) FACsPbI3 PSCs achieve 26.03%- and 26.38%- efficiencies, respectively, retaining unattenuated operation initial efficiency after tracking at the maximum power point (MPP) under illumination for 3000 h 
650 4 |a Journal Article 
650 4 |a crystallization processes 
650 4 |a high efficiency and stability 
650 4 |a perovskite solar cells 
650 4 |a successive interactions 
700 1 |a Xie, Zhuang  |e verfasserin  |4 aut 
700 1 |a Duan, Yuwei  |e verfasserin  |4 aut 
700 1 |a Li, Yongzhe  |e verfasserin  |4 aut 
700 1 |a Sun, Yiqiao  |e verfasserin  |4 aut 
700 1 |a Su, Chunbo  |e verfasserin  |4 aut 
700 1 |a Li, Hongxiang  |e verfasserin  |4 aut 
700 1 |a Sun, Rui  |e verfasserin  |4 aut 
700 1 |a Cheng, Minghui  |e verfasserin  |4 aut 
700 1 |a Wang, Hanye  |e verfasserin  |4 aut 
700 1 |a Xu, Dongfang  |e verfasserin  |4 aut 
700 1 |a Zhang, Ke  |e verfasserin  |4 aut 
700 1 |a Wang, Yifan  |e verfasserin  |4 aut 
700 1 |a Lei, Hongjie  |e verfasserin  |4 aut 
700 1 |a Peng, Qiang  |e verfasserin  |4 aut 
700 1 |a Guo, Kunpeng  |e verfasserin  |4 aut 
700 1 |a Liu, Shengzhong  |e verfasserin  |4 aut 
700 1 |a Liu, Zhike  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2024) vom: 26. Dez., Seite e2414354  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g year:2024  |g day:26  |g month:12  |g pages:e2414354 
856 4 0 |u http://dx.doi.org/10.1002/adma.202414354  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |j 2024  |b 26  |c 12  |h e2414354