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|a 10.1002/adma.202414786
|2 doi
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|a pubmed24n1637.xml
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|a (DE-627)NLM381891283
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|a (NLM)39703125
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Yang, Yali
|e verfasserin
|4 aut
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|a Expandable Fast Li-Ion Diffusion Network of Li-Rich Mn-Based Oxides via Single-Layer LiCo(Ni)O2 Segregation
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.12.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Li-rich Mn-based cathode materials exhibit a remarkable reversible specific capacity exceeding 250 mAh g-1, positioning them as the preferred choice for the next generation of high-energy density lithium-ion battery cathode materials. However, their inferior rate and cycling performance pose significant challenges. In this context, a Li-rich material incorporating an expanded fast Li-ion diffusion network has been successfully synthesized. This advancement involves the introduction of a single-layer of LiCo(Ni)O2 with high Li-ion diffusion coefficients into the crystal structure of Li-rich cathode, thereby enhancing the rate performance, achieving an impressive capacity of 212 mAh g-1 at 5 C. Furthermore, the single-layer LiCo(Ni)O2 can effectively isolates Li2MnO3 phase domains, thereby enhancing the structural stability during the anion redox process, consequently extending the electrochemical stability limits. Operating within a voltage range of 2.1-4.6 V, the capacity retention reaches 80% after 400 cycles, with a voltage decay of merely 0.74 mV per cycle. This innovative utilization of an expanded fast Li-ion diffusion network provides invaluable insights that will guide the development of strategies aimed at unlocking rate capability in layered oxide cathode materials
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|a Journal Article
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|a Li‐ion battery
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|a Li‐rich Mn‐based oxides
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|a expandable fast Li‐ion diffusion network
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|a segreation layer
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|a single‐layer LiCo(Ni)O2
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|a Luo, Tie
|e verfasserin
|4 aut
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1 |
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|a Zuo, Yuxuan
|e verfasserin
|4 aut
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|a Wang, Hangchao
|e verfasserin
|4 aut
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|a Gao, Chuan
|e verfasserin
|4 aut
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|a Cai, Junfei
|e verfasserin
|4 aut
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|a Yang, Tonghuan
|e verfasserin
|4 aut
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|a Xiao, Wukun
|e verfasserin
|4 aut
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|a Yu, Yue
|e verfasserin
|4 aut
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|a Xia, Dingguo
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 20. Dez., Seite e2414786
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:20
|g month:12
|g pages:e2414786
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|u http://dx.doi.org/10.1002/adma.202414786
|3 Volltext
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