Bright and Efficient CsSnBr3 Light-Emitting Diodes Enabled by Interfacial Reaction-Assisted Crystallization
© 2024 Wiley‐VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 19. Dez., Seite e2414841 |
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| Weitere Verfasser: | , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2024
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article interfacial reaction light‐emitting diodes tin‐based perovskites |
| Zusammenfassung: | © 2024 Wiley‐VCH GmbH. Tin-based perovskites are more environmentally friendly than their lead-based alternatives. Perovskite light-emitting diodes (PeLEDs) using iodide-based tin perovskites have achieved considerable advancements in efficiency. However, PeLEDs using bromide-based tin perovskites have not progressed as rapidly, primarily due to challenges in controlling their crystallization processes. Here, an interfacial reaction-assisted crystallization method is introduced to achieve bright and efficient CsSnBr3 PeLEDs. It is started by forming an intermediate phase through the coordination of SnBr2 with ethylenediamine derivatives. Subsequently, a protonation reaction is designed between the intermediate phase and the acidic polyethylenedioxythiophene: poly(styrene sulfonate) hole-transport layer to generate high-quality CsSnBr3 films. Additionally, the use of potassium thiocyanate additives effectively enhances the photoluminescence efficiency of the CsSnBr3 films. These efforts result in CsSnBr3-based PeLEDs achieving a maximum luminance of 787 cd m-2 and a peak external quantum efficiency of 0.91%, demonstrating the most efficient and brightest CsSnBr3-based PeLEDs to date. This work opens an avenue to better control the crystallization of tin-based perovskite |
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| Beschreibung: | Date Revised 20.12.2024 published: Print-Electronic Citation Status Publisher |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202414841 |