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241211s2025 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202413677
|2 doi
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|a pubmed25n1304.xml
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|a (NLM)39659106
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Liu, Zhenjie
|e verfasserin
|4 aut
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|a Reviving Zn Dendrites to Electroactive Zn2+ by Ion Sieve Interface
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|c 2025
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 05.02.2025
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Zn0 dendrite formation during repeated plating/stripping processes limits the practical use of Zn-metal anodes in reliable and affordable energy storage. Traditional methods, including dendrite suppression and dendrite regulation, fail under demanding performance conditions due to Zn2+ diffusion limitations and concentration gradients. Here, using an in situ pre-zincation approach, a Li2ZnxTi3-xO8 (LZTO, 0<x<3) layer with uniform ion channels is introduced. This layer acts as an ionic sieve, reviving Zn0 dendrite into Zn2+ through redox reactions and enhancing Zn2+ diffusion kinetics. Experiment and simulation results reveal that Zn2+ migrates along the (111) crystal plane of LZTO through the successive replacement of Zn atoms in tetrahedral positions, with a high transference number of 0.796. LZTOZn performs better in coin cells at high currents (e.g., 50 mA cm-2) and operates at higher Zn utilization (300 h at 56.98% Zn utilization), with four times the lifespan at -40 °C and six times longer in alkaline electrolytes compared to bare Zn. Pouch cells with LZTO@Zn anodes operate in a low N/P ratio (6.9) and lean electrolyte (E/C is 20 µL mA h-1), achieving enhanced cycling stability. The findings indicate the significance of ion sieves with ordered ion channels in mitigating Zn0 dendrites and promoting rapid Zn2+ transport
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|a Journal Article
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|a Zn anode
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|a Zn2+ ion sieve
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|a dendrite‐free
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|a interface engineering
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1 |
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|a Xi, Murong
|e verfasserin
|4 aut
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1 |
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|a Li, Guanjie
|e verfasserin
|4 aut
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1 |
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|a Huang, Yudai
|e verfasserin
|4 aut
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1 |
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|a Mao, Lei
|e verfasserin
|4 aut
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1 |
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|a Xu, Jun
|e verfasserin
|4 aut
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1 |
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|a Wang, Wei
|e verfasserin
|4 aut
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1 |
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|a Qi, Zihan
|e verfasserin
|4 aut
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1 |
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|a Ding, Juan
|e verfasserin
|4 aut
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1 |
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|a Zhang, Shilin
|e verfasserin
|4 aut
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|a Guo, Zaiping
|e verfasserin
|4 aut
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0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 37(2025), 5 vom: 11. Feb., Seite e2413677
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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773 |
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|g volume:37
|g year:2025
|g number:5
|g day:11
|g month:02
|g pages:e2413677
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|u http://dx.doi.org/10.1002/adma.202413677
|3 Volltext
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