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241205s2025 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202413537
|2 doi
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|a pubmed25n1295.xml
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|a (DE-627)NLM381101096
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|a eng
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|a Rawat, Rahul Singh
|e verfasserin
|4 aut
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|a Thermionic Emission in Artificially Structured Single-Crystalline Elemental Metal/Compound Semiconductor Superlattices
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|c 2025
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 29.01.2025
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Metal/semiconductor superlattices represent a fascinating frontier in materials science and nanotechnology, where alternating layers of metals and semiconductors are precisely engineered at the atomic and nano-scales. Traditionally, epitaxial metal/semiconductor superlattice growth requires constituent materials from the same family, exhibiting identical structural symmetry and low lattice mismatch. Here, beyond this conventional constraint, a novel class of epitaxial lattice-matched metal/semiconductor superlattices is introduced that utilizes refractory hexagonal elemental transition metals and wide-bandgap III-nitride semiconductors. Exemplified by the Hf/AlN superlattices exhibiting coherent layer-by-layer epitaxial growth, cross-plane thermionic emission is observed through current-voltage measurements accomplished for the first time in any metal/semiconductor superlattices. Further, thermoreflectance measurements reveal significant enhancement in cross-plane Seebeck coefficients attributed to carrier energy filtering by Schottky barriers. Demonstration of artificially structured elemental-metal/wide-bandgap compound-semiconductor superlattices promises to usher in new fundamental physics studies and cutting-edge applications such as tunable hyperbolic metamaterials, quantum computing, and thermionic-emission-based thermoelectric and thermophotonic energy conversion devices
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|a Journal Article
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|a III‐nitride semiconductors
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|a metal/semiconductor superlattices
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4 |
|a schottky barrier
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|a seebeck coefficient enhancement
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| 650 |
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4 |
|a thermionic emission
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|a Rao, Dheemahi
|e verfasserin
|4 aut
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|a Rudra, Sourav
|e verfasserin
|4 aut
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|a Raut, Nilesh
|e verfasserin
|4 aut
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1 |
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|a Biswas, Bidesh
|e verfasserin
|4 aut
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|a Karanje, Renuka
|e verfasserin
|4 aut
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|a Das, Prasanna
|e verfasserin
|4 aut
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|a Pillai, Ashalatha Indiradevi Kamalasanan
|e verfasserin
|4 aut
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| 700 |
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|a Bahk, Je-Hyeong
|e verfasserin
|4 aut
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|a Garbrecht, Magnus
|e verfasserin
|4 aut
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| 700 |
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|a Saha, Bivas
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 37(2025), 4 vom: 22. Jan., Seite e2413537
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:37
|g year:2025
|g number:4
|g day:22
|g month:01
|g pages:e2413537
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|u http://dx.doi.org/10.1002/adma.202413537
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