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241205s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202413709
|2 doi
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|a pubmed24n1621.xml
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|a (DE-627)NLM381100936
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|a (NLM)39623786
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Yu, Ji
|e verfasserin
|4 aut
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|a Large Scale Lead-Free Perovskite Polycrystalline Wafer Achieved by Hot-Pressed Strategy for High-Performance X-Ray Detection
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 03.12.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Halide perovskites (HPs) have demonstrated excellent direct X-ray detection performance. Lead-free perovskite polycrystalline wafers have outstanding advantages in large-area X-ray imaging applications due to their area-scalability, thickness-controllability, large bulk resistivity, and ease of integration with large-area thin film transistor arrays. However, currently lead-free perovskite polycrystalline wafers possess low sensitivity, typically less than 1000 µC Gy-1 cm-2, which severely limits their X-ray detection applications. Here, high-quality and large scale polycrystalline wafers of AG3Bi2I9 (AG: aminoguanidinium) with short intercluster distances are successfully prepared using a hot-pressing method. The wafers possess high mobility-lifetime product of 5.66 × 10-3 cm2 V-1 and therefore achieve high X-ray sensitivity of 2675 µC Gy-1 cm-2, which can be comparable to those of the high-quality single crystal counterpart reported by the previous research (7.94 × 10-3 cm2 V-1 and 5791 µC Gy-1 cm-2), and represent the best results of the currently lead-free HP polycrystalline wafers. Besides, the wafers exhibit the X-ray detection limit as low as 11.8 nGy s-1, excellent long-term working stability, and high spatial resolution of 5.9 lp mm-1 in imaging. The findings demonstrate that AG3Bi2I9 polycrystalline wafers are feasible for high-performance X-ray detection and imaging system
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|a Journal Article
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|a X‐ray detection
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|a hot‐pressing
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|a lead‐free perovskites
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|a polycrystalline wafers
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1 |
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|a Luo, Yinxian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tian, Ning
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Yucheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Zhou
|e verfasserin
|4 aut
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|a Pi, Jiacheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Lin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Ruoning
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Chengyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Shengzhong Frank
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 02. Dez., Seite e2413709
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:02
|g month:12
|g pages:e2413709
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|u http://dx.doi.org/10.1002/adma.202413709
|3 Volltext
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