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241205s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202410163
|2 doi
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|a pubmed25n1269.xml
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|a (DE-627)NLM381066355
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|a (NLM)39620320
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Guo, Yang
|e verfasserin
|4 aut
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|a Surface-Assisted Passivation Growth of 2D Ultrathin β-Bi2O3 Crystals for High-Performance Polarization-Sensitive Photodetectors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 02.12.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a 2D nonlayered materials (NLMs) have garnered considerable attention due to unique surface structure and bright application prospect. However, owing to the strong interatomic forces caused by intrinsic isotropic chemical bonds in all directions, the direct synthesis of ultrathin and large area 2D NLMs remains a tremendous challenge. Here, the surface-assisted passivation growth strategy is designed to synthesize ultrathin and large size β-Bi2O3 crystals with the thickness down to 0.77 nm and the lateral size up to 163 µm. These results are primarily ascribed to the bonding between Se atoms and the unsaturated Bi atoms on the surface of β-Bi2O3, resulting in the surface passivation and promoting the obtaining of ultrathin β-Bi2O3. Strikingly, the photodetectors based on β-Bi2O3 flakes exhibit a high photoresponsivity of 71.91 A W-1, an excellent detectivity of 6.09 × 1013 Jones, a remarkable external quantum efficiency of 2.4 × 104%, an outstanding anisotropic photodetection and excellent UV imaging capability at 365 nm. This work sheds light on the synthesis of 2D ultrathin NLMs and promotes their applications in multifunctional optoelectronics
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|a Journal Article
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|a 2D materials
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4 |
|a nonlayered materials
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| 650 |
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|a polarization‐sensitive photodetectors
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| 650 |
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|a vapour deposition
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1 |
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|a Zhang, Qing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ren, Zebin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Lin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Weijie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shen, Xianfeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dong, Jichen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Rongjin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Geng, Dechao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Wenping
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 02. Dez., Seite e2410163
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g year:2024
|g day:02
|g month:12
|g pages:e2410163
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|u http://dx.doi.org/10.1002/adma.202410163
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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|a GBV_ILN_350
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|a AR
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|j 2024
|b 02
|c 12
|h e2410163
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