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241107s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202410835
|2 doi
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|a pubmed24n1595.xml
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|a (DE-627)NLM379929139
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|a (NLM)39506396
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|a DE-627
|b ger
|c DE-627
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|a eng
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|a Liu, Qingxiang
|e verfasserin
|4 aut
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|a Standing 1D Chains Enable Efficient Wide-Bandgap Selenium Solar Cells
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 07.11.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a The recent surge in tandem solar cells and indoor photovoltaics has renewed interest in selenium (Se), the world's first photovoltaic material, due to its intrinsic wide bandgap of ≈1.9 eV, high stability, and non-toxicity in small quantities when applied in photovoltaics. However, with a 1D chained crystal structure, Se tends to grow crystalline films with a lying orientation-chains parallel to substrates arising from the low surface energy; this results in poor carrier transport across chains held together by weak van der Waals forces. Here a substrate-heating strategy that facilitates the interfacial bonding between Se and substrate is introduced, enabling the growth of Se films with a standing orientation-chains perpendicular to substrates. This achieves efficient carrier transport along covalently bonded chains. The resulting Se films thereby exhibit a fourfold increase in carrier mobility compared to lying-oriented Se films. Consequently, Se solar cells are achieved with the highest power conversion efficiency of 8.1% under AM1.5G 1-sun illumination. The unencapsulated devices exhibit negligible efficiency loss after 1 000 h of storage under ambient conditions
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|a Journal Article
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|a deposition
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|a orientation
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|a photovoltaics
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|a selenium
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|a thin film
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|a Wang, Xia
|e verfasserin
|4 aut
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|a Li, Zongbao
|e verfasserin
|4 aut
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|a Lu, Wenbo
|e verfasserin
|4 aut
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|a Wen, Xin
|e verfasserin
|4 aut
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|a An, Xioayan
|e verfasserin
|4 aut
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|a Feng, Mingjie
|e verfasserin
|4 aut
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|a Yan, Hui-Juan
|e verfasserin
|4 aut
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|a Hu, Jin-Song
|e verfasserin
|4 aut
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|a Xue, Ding-Jiang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 06. Nov., Seite e2410835
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:06
|g month:11
|g pages:e2410835
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|u http://dx.doi.org/10.1002/adma.202410835
|3 Volltext
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