Substantially Enhanced Spin Polarization in Epitaxial CrTe2 Quantum Films

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 05. Nov., Seite e2411137
1. Verfasser: Zhang, Xiaoqian (VerfasserIn)
Weitere Verfasser: Lu, Qiangsheng, Shen, Zhen-Xiong, Niu, Wei, Liu, Xiangrui, Lu, Jiahua, Lin, Wenting, Han, Lulu, Weng, Yakui, Shao, Tianhao, Yan, Pengfei, Ren, Quan, Li, Huayao, Chang, Tay-Rong, Singh, David J, He, Lixin, He, Liang, Liu, Chang, Bian, Guang, Miao, Lin, Xu, Yongbing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article epitaxial 2D magnetic films interlayer interaction perpendicular magnetic anisotropy spin polarization spin‐resolved ARPES
LEADER 01000naa a22002652 4500
001 NLM37985631X
003 DE-627
005 20241106233206.0
007 cr uuu---uuuuu
008 241106s2024 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202411137  |2 doi 
028 5 2 |a pubmed24n1592.xml 
035 |a (DE-627)NLM37985631X 
035 |a (NLM)39499078 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Zhang, Xiaoqian  |e verfasserin  |4 aut 
245 1 0 |a Substantially Enhanced Spin Polarization in Epitaxial CrTe2 Quantum Films 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 05.11.2024 
500 |a published: Print-Electronic 
500 |a Citation Status Publisher 
520 |a © 2024 Wiley‐VCH GmbH. 
520 |a 2D van der Waals (vdW) magnets, which extend to the monolayer (ML) limit, are rapidly gaining prominence in logic applications for low-power electronics. To improve the performance of spintronic devices, such as vdW magnetic tunnel junctions, a large effective spin polarization of valence electrons is highly desired. Despite its considerable significance, direct probe of spin polarization in these 2D magnets has not been extensively explored. Here, using 2D vdW ferromagnet of CrTe2 as a prototype, the spin degrees of freedom in the thin films are directly probed using Mott polarimetry. The electronic band of 50 ML CrTe2 thin film, spanning the Brillouin zone, exhibits pronounced spin-splitting with polarization peaking at 7.9% along the out-of-plane direction. Surprisingly, atomic-layer-dependent spin-resolved measurements show a significantly enhanced spin polarization in a 3 ML CrTe2 film, achieving 23.4% polarization even in the absence of an external magnetic field. The demonstrated correlation between spin polarization and film thickness highlights the pivotal influence of perpendicular magnetic anisotropy, interlayer interactions, and itinerant behavior on these properties, as corroborated by theoretical analysis. This groundbreaking experimental verification of intrinsic effective spin polarization in CrTe2 ultrathin films marks a significant advance in establishing 2D ferromagnetic atomic layers as a promising platform for innovative vdW-based spintronic devices 
650 4 |a Journal Article 
650 4 |a epitaxial 2D magnetic films 
650 4 |a interlayer interaction 
650 4 |a perpendicular magnetic anisotropy 
650 4 |a spin polarization 
650 4 |a spin‐resolved ARPES 
700 1 |a Lu, Qiangsheng  |e verfasserin  |4 aut 
700 1 |a Shen, Zhen-Xiong  |e verfasserin  |4 aut 
700 1 |a Niu, Wei  |e verfasserin  |4 aut 
700 1 |a Liu, Xiangrui  |e verfasserin  |4 aut 
700 1 |a Lu, Jiahua  |e verfasserin  |4 aut 
700 1 |a Lin, Wenting  |e verfasserin  |4 aut 
700 1 |a Han, Lulu  |e verfasserin  |4 aut 
700 1 |a Weng, Yakui  |e verfasserin  |4 aut 
700 1 |a Shao, Tianhao  |e verfasserin  |4 aut 
700 1 |a Yan, Pengfei  |e verfasserin  |4 aut 
700 1 |a Ren, Quan  |e verfasserin  |4 aut 
700 1 |a Li, Huayao  |e verfasserin  |4 aut 
700 1 |a Chang, Tay-Rong  |e verfasserin  |4 aut 
700 1 |a Singh, David J  |e verfasserin  |4 aut 
700 1 |a He, Lixin  |e verfasserin  |4 aut 
700 1 |a He, Liang  |e verfasserin  |4 aut 
700 1 |a Liu, Chang  |e verfasserin  |4 aut 
700 1 |a Bian, Guang  |e verfasserin  |4 aut 
700 1 |a Miao, Lin  |e verfasserin  |4 aut 
700 1 |a Xu, Yongbing  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2024) vom: 05. Nov., Seite e2411137  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g year:2024  |g day:05  |g month:11  |g pages:e2411137 
856 4 0 |u http://dx.doi.org/10.1002/adma.202411137  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |j 2024  |b 05  |c 11  |h e2411137