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241103s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202411765
|2 doi
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|a pubmed24n1589.xml
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|a (DE-627)NLM379742535
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|a (NLM)39487657
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhang, Liangzhu
|e verfasserin
|4 aut
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|a Vacancies Engineering in Molybdenum Boride MBene Nanosheets to Activate Room-Temperature Ferromagnetism
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 02.11.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a The rapid development of low energy dissipation spintronic devices has stimulated the search for air-stable 2D nanomaterials possessing room-temperature ferromagnetism. Here the experimental realization of 2D Mo4/3B2 nanosheets is reported with intrinsic room-temperature ferromagnetic characteristics by vacancy engineering. These nanosheets are synthesized by etching the bulk MAB phase (Mo2/3Y1/3)2AlB2 into Mo4/3B2 nanosheets in ZnCl2 molten salt. The Mo4/3B2 nanosheets show robust intrinsic ferromagnetic properties, with a saturation magnetic moment of 0.044 emu g-1 at 300 K, while vacancy-free MoB MBene exhibits paramagnetism. It is elucidated that the Mo-vacancy defect generates large density of states near the Fermi surface and spontaneously spin-split bands through first-principles calculations, which contributes to the non-zero magnetic moment in Mo4/3B2 nanosheets. This work lays the groundwork for activating the magnetic properties of MBene nanosheets by vacancy engineering, offering the possibilities for development of practical spintronic devices
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|a Journal Article
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|a MBene
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|a molybdenum boride
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|a nanosheets
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|a room‐temperature ferromagnetism
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|a Xing, Shucheng
|e verfasserin
|4 aut
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|a He, Tian
|e verfasserin
|4 aut
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|a Wu, Wei-Bin
|e verfasserin
|4 aut
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|a Zhang, An-Lei
|e verfasserin
|4 aut
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|a Guo, Zhoubin
|e verfasserin
|4 aut
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|a Das, Pratteek
|e verfasserin
|4 aut
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|a Zheng, Shuanghao
|e verfasserin
|4 aut
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|a Ge, Jun-Yi
|e verfasserin
|4 aut
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|a Feng, Xinliang
|e verfasserin
|4 aut
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|a Sun, Zhimei
|e verfasserin
|4 aut
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|a Wu, Zhong-Shuai
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 02. Nov., Seite e2411765
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:02
|g month:11
|g pages:e2411765
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|u http://dx.doi.org/10.1002/adma.202411765
|3 Volltext
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