Vacancies Engineering in Molybdenum Boride MBene Nanosheets to Activate Room-Temperature Ferromagnetism

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 02. Nov., Seite e2411765
1. Verfasser: Zhang, Liangzhu (VerfasserIn)
Weitere Verfasser: Xing, Shucheng, He, Tian, Wu, Wei-Bin, Zhang, An-Lei, Guo, Zhoubin, Das, Pratteek, Zheng, Shuanghao, Ge, Jun-Yi, Feng, Xinliang, Sun, Zhimei, Wu, Zhong-Shuai
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MBene molybdenum boride nanosheets room‐temperature ferromagnetism
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520 |a The rapid development of low energy dissipation spintronic devices has stimulated the search for air-stable 2D nanomaterials possessing room-temperature ferromagnetism. Here the experimental realization of 2D Mo4/3B2 nanosheets is reported with intrinsic room-temperature ferromagnetic characteristics by vacancy engineering. These nanosheets are synthesized by etching the bulk MAB phase (Mo2/3Y1/3)2AlB2 into Mo4/3B2 nanosheets in ZnCl2 molten salt. The Mo4/3B2 nanosheets show robust intrinsic ferromagnetic properties, with a saturation magnetic moment of 0.044 emu g-1 at 300 K, while vacancy-free MoB MBene exhibits paramagnetism. It is elucidated that the Mo-vacancy defect generates large density of states near the Fermi surface and spontaneously spin-split bands through first-principles calculations, which contributes to the non-zero magnetic moment in Mo4/3B2 nanosheets. This work lays the groundwork for activating the magnetic properties of MBene nanosheets by vacancy engineering, offering the possibilities for development of practical spintronic devices 
650 4 |a Journal Article 
650 4 |a MBene 
650 4 |a molybdenum boride 
650 4 |a nanosheets 
650 4 |a room‐temperature ferromagnetism 
700 1 |a Xing, Shucheng  |e verfasserin  |4 aut 
700 1 |a He, Tian  |e verfasserin  |4 aut 
700 1 |a Wu, Wei-Bin  |e verfasserin  |4 aut 
700 1 |a Zhang, An-Lei  |e verfasserin  |4 aut 
700 1 |a Guo, Zhoubin  |e verfasserin  |4 aut 
700 1 |a Das, Pratteek  |e verfasserin  |4 aut 
700 1 |a Zheng, Shuanghao  |e verfasserin  |4 aut 
700 1 |a Ge, Jun-Yi  |e verfasserin  |4 aut 
700 1 |a Feng, Xinliang  |e verfasserin  |4 aut 
700 1 |a Sun, Zhimei  |e verfasserin  |4 aut 
700 1 |a Wu, Zhong-Shuai  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2024) vom: 02. Nov., Seite e2411765  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g year:2024  |g day:02  |g month:11  |g pages:e2411765 
856 4 0 |u http://dx.doi.org/10.1002/adma.202411765  |3 Volltext 
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