Preparation and Formation Mechanism of β-SiC Coatings Using a SiCl4-CH4-H2-N2 System
The mechanism of β-SiC preparation via chemical vapor deposition (CVD) of the SiCl4-CH4-H2-N2 system remains unclear. Consequently, the change of molar Gibbs free energy of the CVD β-SiC chemical reaction in the SiCl4-CH4-H2-N2 system has been studied by the Helsinki Software Corporation (HSC) Chemi...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1999. - 40(2024), 46 vom: 19. Nov., Seite 24687-24695
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| 1. Verfasser: |
Huo, Tongguo
(VerfasserIn) |
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| Weitere Verfasser: |
Cao, Kai,
Zheng, Jianxin,
Zhu, Dan,
Lin, Yuan,
Dai, Yu,
Wu, Jian |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2024
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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