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|a 10.1002/adma.202411738
|2 doi
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|a pubmed24n1623.xml
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|a (DE-627)NLM379307189
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|a (NLM)39444021
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|a DE-627
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|c DE-627
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|a eng
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| 100 |
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|a Hu, Jinsuo
|e verfasserin
|4 aut
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|a Realizing Ultrahigh Conversion Efficiency of ≈9.0% in YbCd2Sb2/Mg3Sb2 Zintl Module for Thermoelectric Power Generation
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 05.12.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Recently, YbCd2Sb2-based Zintl compounds have been widely investigated owing to their extraordinary thermoelectric (TE) performance. However, its p orbitals of anions that determined the valence band structure are split due to crystal field splitting that provides a good platform for band manipulation by doping/alloying and, more importantly, the YbCd2Sb2-based device has yet to be reported. In this work, single-phase YbCd1.5Zn0.5Sb2 is successfully obtained through precise chemical composition control. Then, YbMg2Sb2-alloying increases the cationic vacancy defect formation energy and further optimizes carrier concentration. Moreover, the band structure of YbCd1.5Zn0.5Sb2 is subtly manipulated, and the underlying mechanism is experimentally explored. Combined with the reduced lattice thermal conductivity, a high peak ZT value of ∼1.43 at 700 K is obtained for YbCd1.425Zn0.475Mg0.1Sb2. Subsequently, choosing Fe90Sb10 as the diffusion barrier layer and adopting the transient liquid phase bonding technique, for the first time, it is demonstrated that YbCd2Sb2/Mg3(Sb, Bi)2 TE module with an ultrahigh conversion efficiency of ≈9.0% at a heat difference of 430 K. More importantly, this module displays good thermal stability. This work paves the way for YbCd2Sb2 materials and devices in mid-temperature heat recovery
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|a Journal Article
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|a YbCd2Sb2 Zintl compounds
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|a conversion efficiency
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|a orbital alignment
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|a thermoelectric module
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|a transient liquid phase bonding
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|a Sun, Yuxin
|e verfasserin
|4 aut
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|a Shi, Wenjing
|e verfasserin
|4 aut
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|a Wu, Hao
|e verfasserin
|4 aut
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|a Zhu, Jianbo
|e verfasserin
|4 aut
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|a Cheng, Jinxuan
|e verfasserin
|4 aut
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|a Jiao, Lei
|e verfasserin
|4 aut
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|a Jiang, Xiaohan
|e verfasserin
|4 aut
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|a Xie, Liangjun
|e verfasserin
|4 aut
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|a Qu, Nuo
|e verfasserin
|4 aut
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|a Li, Fushan
|e verfasserin
|4 aut
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|a Yu, Zhiyuan
|e verfasserin
|4 aut
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|a Zhang, Qian
|e verfasserin
|4 aut
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|a Liu, Zihang
|e verfasserin
|4 aut
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|a Guo, Fengkai
|e verfasserin
|4 aut
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|a Cai, Wei
|e verfasserin
|4 aut
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| 700 |
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|a Sui, Jiehe
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 49 vom: 01. Dez., Seite e2411738
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:49
|g day:01
|g month:12
|g pages:e2411738
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|u http://dx.doi.org/10.1002/adma.202411738
|3 Volltext
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