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241022s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202413141
|2 doi
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|a pubmed24n1578.xml
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|a (DE-627)NLM379229390
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|a (NLM)39436100
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Shang, Long
|e verfasserin
|4 aut
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|a Single-Nanometer Spinel with Precise Cation Distribution for Enhanced Oxygen Reduction
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 22.10.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Designing spinel nanocrystals (NCs) with tailored structural composition and cation distribution is crucial for superior catalytic performance but remarkably challenging due to their intricate nature. Here, an aggregation growth restricted hot-injection method is presented by meticulously investigating the fundamental nucleation and aggregation-driven growth kinetics governing spinel NC formation to address this challenge. Through controlled collision probability of nuclei during growth, this approach enables the synthesis of spinel NCs with unprecedented, single nanometer (1.2 nm). Single-nanometer CoMn2O4 spinel via this method exhibits a highly tailored structure with a maximized population of highly active octahedral Mn atoms, thereby optimizing oxygen intermediate adsorption during oxygen reduction reaction (ORR). Consequently, it exhibits a remarkable half-wave potential of 0.88 V in ORR and leads to a superior power density (170.9 mW cm-2) in zinc-air battery, outperforming commercial Pt/C and most reported spinel oxides, revealing a clear structure-property relationship. This structure design strategy is readily adaptable for the precise synthesis and engineering of various spinel structures, opening new avenues for developing advanced electrocatalysts and energy storage materials
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|a Journal Article
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|a oxygen reduction reaction
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|a restricted aggregation growth
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|a single nanometer
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|a spinel oxides
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|a structure engineering
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|a Ni, Youxuan
|e verfasserin
|4 aut
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1 |
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|a Wang, Yuankun
|e verfasserin
|4 aut
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1 |
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|a Yang, Wenxuan
|e verfasserin
|4 aut
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1 |
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|a Wang, Linyue
|e verfasserin
|4 aut
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1 |
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|a Li, Haixia
|e verfasserin
|4 aut
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|a Zhang, Kai
|e verfasserin
|4 aut
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|a Yan, Zhenhua
|e verfasserin
|4 aut
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|a Chen, Jun
|e verfasserin
|4 aut
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773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 22. Okt., Seite e2413141
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:22
|g month:10
|g pages:e2413141
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|u http://dx.doi.org/10.1002/adma.202413141
|3 Volltext
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|j 2024
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