Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials : Processes, Applications, and Perspectives

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 19. Okt., Seite e2411108
1. Verfasser: Choi, Soo Ho (VerfasserIn)
Weitere Verfasser: Kim, Yongsung, Jeon, Il, Kim, Hyunseok
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Review 2D materials applications fabrication heterostructure wide‐bandgap semiconductors
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520 |a Wide-bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scalability, and cost-effectiveness of WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG is emerging as a promising solution. This review presents recent advancements in the integration of WBGs and 2D materials, including fabrication techniques, mechanisms, devices, and novel functionalities. The properties of various WBGs and 2D materials, their integration techniques including epitaxial and nonepitaxial growth methods as well as transfer techniques, along with their advantages and challenges, are discussed. Additionally, devices and applications based on the WBG/2D heterostructures are introduced. Distinctive advantages of merging 2D materials with WBGs are described in detail, along with perspectives on strategies to overcome current challenges and unlock the unexplored potential of WBG/2D heterostructures 
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700 1 |a Kim, Yongsung  |e verfasserin  |4 aut 
700 1 |a Jeon, Il  |e verfasserin  |4 aut 
700 1 |a Kim, Hyunseok  |e verfasserin  |4 aut 
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