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|a 10.1002/adma.202413232
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|a pubmed24n1571.xml
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|a (DE-627)NLM379075180
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|a (NLM)39420662
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Hu, Lin
|e verfasserin
|4 aut
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|a Ionized Phenanthroline Derivatives Suppressing Interface Chemical Interactions with Active Layer for High-efficiency Organic Solar Cells with Exceptional Device Stability
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.10.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a The contact interface between the charge transport interlayer and the active layer is crucial for the non-fullerene organic solar cells (NF OSCs) to achieve high efficiency and long-term stability. In this study, two novel phenanthroline (Phen) derivatives, tbp-Phen and tbp-PhenBr, are developed as efficient cathode interfacial materials (CIMs). The larger steric hindrance substituents and the ionization of nitrogen atoms on the Phen framework jointly enable the tbp-PhenBr CIM with a stable film morphology and immensely suppress the detrimental interface chemical interactions with the NF active layer. Consequently, tbp-PhenBr-based OSC achieves a higher efficiency (PCE = 16.34%) than bathocuproine (BCP)-based control device (PCE = 13.70%) using PM6:Y6 as the active layer. More importantly, the tbp-PhenBr-based device maintains 80% of its initial efficiency (T80) for 3264 h in dark conditions and 220 h after being heated at 85 °C, significantly outperforming the BCP-based device. The tbp-PhenBr CIM also shows broad applicability across various binary and ternary active layer systems, affording a notable PCE of 19.49%. Additionally, the tbp-PhenBr CIM can be processed via a thermal evaporation technique and the prepared devices exhibit high reproducibility. This work provides innovative insights into the molecular design of the CIMs for stable and efficient NF OSCs
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|a Journal Article
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|a cathode interfacial materials
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|a non‐fullerene organic solar cells
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|a phenanthroline
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|a stability
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|a Quan, Jianwei
|e verfasserin
|4 aut
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|a Li, Jingbai
|e verfasserin
|4 aut
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|a Li, Zhendong
|e verfasserin
|4 aut
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|a Lan, Senmei
|e verfasserin
|4 aut
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|a Yu, Manjiang
|e verfasserin
|4 aut
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|a Liao, Xunfan
|e verfasserin
|4 aut
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|a Jin, Yingzhi
|e verfasserin
|4 aut
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|a Yin, Xinxing
|e verfasserin
|4 aut
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|a Song, Jiaxing
|e verfasserin
|4 aut
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|a Zhou, Dan
|e verfasserin
|4 aut
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|a Li, Zaifang
|e verfasserin
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|a Chen, Yiwang
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 17. Okt., Seite e2413232
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:17
|g month:10
|g pages:e2413232
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|u http://dx.doi.org/10.1002/adma.202413232
|3 Volltext
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