Molecular Engineering of Coordination Ligand for Multifunctional Sol-Gel Oxides
© 2024 Wiley‐VCH GmbH.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 46 vom: 06. Nov., Seite e2409906 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2024
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article crosslinking ligand oxide sol–gel thin‐film transistor |
Zusammenfassung: | © 2024 Wiley‐VCH GmbH. Here a ligand exchange strategy for synthesizing sol-gel oxides is demonstrated to achieve multifunctionality including direct photolithography, high dielectric strength, and high charge carrier mobility, which is challenging to obtain in such oxides. For this purpose, a series of bidentate ligands with azide termini and ethylene-glycol bridges is synthesized, and these ligands are universally applicable to the synthesis of a variety of dielectric and semiconductor oxides. Optimized photolithography conditions yield a high-quality ZrO2 dielectric film with a high dielectric constant and strength of ≈18 and ≈7 MV cm-1, respectively. Additionally, this strategy is applied to semiconductor oxides such as In2O3 and ZnO, and the all-oxide-patterned solution-processed thin-film transistor (TFT) demonstrates a high charge carrier mobility of ≈40 cm2 V-1 s-1. An oxide TFT array is fully photopatterned on a 4-inch Si wafer; uniform performances are observed across these devices. This study suggests the possibility of realizing multifunctional oxides for application in advanced electronics using simple ligand exchange chemistry |
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Beschreibung: | Date Revised 16.11.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.202409906 |