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240925s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202409406
|2 doi
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|a pubmed25n1259.xml
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|a (DE-627)NLM37804981X
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|a (NLM)39318076
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|a eng
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| 100 |
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|a Fu, Can
|e verfasserin
|4 aut
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| 245 |
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|a Dual-Mode Semiconductor Device Enabling Optoelectronic Detection and Neuromorphic Processing with Extended Spectral Responsivity
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 05.12.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a High-performance semiconductor devices capable of multiple functions are pivotal in meeting the challenges of miniaturization and integration in advanced technologies. Despite the inherent difficulties of incorporating dual functionality within a single device, a high-performance, dual-mode device is reported. This device integrates an ultra-thin Al2O3 passivation layer with a PbS/Si hybrid heterojunction, which can simultaneously enable optoelectronic detection and neuromorphic operation. In mode 1, the device efficiently separates photo-generated electron-hole pairs, exhibiting an ultra-wide spectral response from ultraviolet (265 nm) to near-infrared (1650 nm) wavelengths. It also reproduces high-quality images of 256 × 256 pixels, achieving a Q-value as low as 0.00437 µW cm- 2 at a light intensity of 8.58 µW cm- 2. Meanwhile, when in mode 2, the as-assembled device with typical persistent photoconductivity (PPC) behavior can act as a neuromorphic device, which can achieve 96.5% accuracy in classifying standard digits underscoring its efficacy in temporal information processing. It is believed that the present dual-function devices potentially advance the multifunctionality and miniaturization of chips for intelligence applications
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|a Journal Article
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4 |
|a PbS nanofilm
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| 650 |
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4 |
|a optoelectronic synaptic device
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| 650 |
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4 |
|a photodetector
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| 650 |
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4 |
|a p‐n junction
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| 650 |
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4 |
|a reservoir computing system
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| 650 |
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4 |
|a single device dual‐function
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| 700 |
1 |
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|a Yang, Jiawei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Shenghui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Linbao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wei, Huanhuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yujiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Shanshan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Gang
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 49 vom: 09. Dez., Seite e2409406
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:49
|g day:09
|g month:12
|g pages:e2409406
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202409406
|3 Volltext
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