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|a 10.1002/adma.202406290
|2 doi
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|a pubmed25n1259.xml
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|a (DE-627)NLM378049763
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|a (NLM)39318077
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|a DE-627
|b ger
|c DE-627
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|a eng
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|a Hassan, Yasir
|e verfasserin
|4 aut
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|a Twist-Controlled Ferroelectricity and Emergent Multiferroicity in WSe2 Bilayers
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 16.11.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Recently, researchers have been investigating artificial ferroelectricity, which arises when inversion symmetry is broken in certain R-stacked, i.e., zero-degree twisted, van der Waals (vdW) bilayers. Here, the study reports the twist-controlled ferroelectricity in tungsten diselenide (WSe2) bilayers. The findings show noticeable room temperature ferroelectricity that decreases with twist angle within the range 0° < θ < 3°, and disappears completely for θ ≥ 4°. This variation aligns with moiré length scale-controlled ferroelectric dynamics (0° < θ < 3°), while loss beyond 4° may relate to twist-controlled commensurate to non-commensurate transitions. This twist-controlled ferroelectricity serves as a spectroscopic tool for detecting transitions between commensurate and incommensurate moiré patterns. At 5.5 K, 3° twisted WSe2 exhibits ferroelectric and correlation-driven ferromagnetic ordering, indicating twist-controlled multiferroic behavior. The study offers insights into twist-controlled coexisting ferro-ordering and serves as valuable spectroscopic tools
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|a Journal Article
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|a Moiré superlattices
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|a ferroelectricity
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|a multiferroic behavior
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|a transition metal dichalogenides
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|a twist angle
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|a Singh, Budhi
|e verfasserin
|4 aut
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|a Joe, Minwoong
|e verfasserin
|4 aut
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|a Son, Byoung-Min
|e verfasserin
|4 aut
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|a Ngo, Tien Dat
|e verfasserin
|4 aut
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|a Jang, Younggeun
|e verfasserin
|4 aut
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|a Sett, Shaili
|e verfasserin
|4 aut
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|a Singha, Arup
|e verfasserin
|4 aut
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|a Biswas, Rabindra
|e verfasserin
|4 aut
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|a Bhakar, Monika
|e verfasserin
|4 aut
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|a Watanabe, Kenji
|e verfasserin
|4 aut
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|a Taniguchi, Takashi
|e verfasserin
|4 aut
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|a Raghunathan, Varun
|e verfasserin
|4 aut
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|a Sheet, Goutam
|e verfasserin
|4 aut
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|a Lee, Zonghoon
|e verfasserin
|4 aut
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|a Yoo, Won Jong
|e verfasserin
|4 aut
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|a Srivastava, Pawan Kumar
|e verfasserin
|4 aut
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|a Lee, Changgu
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 46 vom: 09. Nov., Seite e2406290
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:36
|g year:2024
|g number:46
|g day:09
|g month:11
|g pages:e2406290
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|u http://dx.doi.org/10.1002/adma.202406290
|3 Volltext
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