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240923s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202410441
|2 doi
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|a pubmed24n1546.xml
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|a (DE-627)NLM377951536
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|a (NLM)39308202
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Jung, Woon Ho
|e verfasserin
|4 aut
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|a Spatial Control of Nickel Vacancies in Colloidal NiMgO Nanocrystals for Efficient and Stable All-inorganic Quantum Dot Light-Emitting Diodes
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 23.09.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Colloidal quantum dot (QD)-based light-emitting diodes (QD-LEDs) have reached the pinnacle of quantum efficiency and are now being actively developed for next-generation displays and brighter light sources. Previous research has suggested utilizing inorganic hole-transport layers (HTLs) to explore brighter and more stable QD-LEDs. However, the performance metrics of such QD-LEDs with inorganic HTLs generally lag behind those of organic-inorganic hybrid QD-LEDs employing organic HTLs. In this study, colloidal NiMgO nanocrystals (NCs) with spatially controlled Mg are introduced as HTLs for realizing efficient and stable all-inorganic QD-LEDs. During the co-condensation of Ni and Mg precursors to produce valence band-lowered NiMgO NCs, incorporating ≈2% Mg into the NiO lattice creates additional Ni vacancies (VNi) within and on the NCs, influencing the hole concentration and mobility of the NiMgO NC films. Passivating the VNi exposed on the surface with magnesium hydroxide allows for tuning the electrical properties of the NiMgO NCs relative to those of an electron transport layer, allowing for a balanced charge supply and suppressed negative charging of the QDs. Optimized all-inorganic QD-LEDs employing NiMgO NCs achieved a peak external quantum efficiency of 16.4%, peak luminance of 269 455 cd m⁻2, and a half-life of 462 690 h at 100 nit
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|a Journal Article
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|a inorganic hole transport material
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|a nickel oxide
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|a quantum dot‐based light‐emitting diodes
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|a Kim, Byong Jae
|e verfasserin
|4 aut
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|a Choi, Mahnmin
|e verfasserin
|4 aut
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|a Lee, Hyeonjun
|e verfasserin
|4 aut
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|a Cho, Hyunjin
|e verfasserin
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|a Kwon, Yong Woo
|e verfasserin
|4 aut
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|a Choi, Yeongho
|e verfasserin
|4 aut
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|a Lee, Hyo Geun
|e verfasserin
|4 aut
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| 700 |
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|a Yoon, Jinha
|e verfasserin
|4 aut
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|a Lee, Keeyong
|e verfasserin
|4 aut
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|a Oh, Sang Ho
|e verfasserin
|4 aut
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|a Cho, Seong-Yong
|e verfasserin
|4 aut
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|a Lee, Doh C
|e verfasserin
|4 aut
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|a Jeong, Sohee
|e verfasserin
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|a Lim, Jaehoon
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 23. Sept., Seite e2410441
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2024
|g day:23
|g month:09
|g pages:e2410441
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|u http://dx.doi.org/10.1002/adma.202410441
|3 Volltext
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|a AR
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|j 2024
|b 23
|c 09
|h e2410441
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