Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures
Recently, searching for a metal-semiconductor junction (MSJ) that exhibits low-contact resistance has received tremendous consideration, as they are essential components in next-generation field-effect transistors. In this work, we design a MSJ by integrating two-dimensional (2D) graphene as the met...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1999. - 40(2024), 39 vom: 01. Okt., Seite 20783-20790
|
|---|
| 1. Verfasser: |
Vu, Tuan V
(VerfasserIn) |
|---|
| Weitere Verfasser: |
Kartamyshev, Andrey I,
Ho, Thi H,
Hieu, Nguyen N,
Phuc, Huynh V,
Nguyen, Son-Tung,
Nguyen, Chuong V |
|---|
| Format: | Online-Aufsatz
|
|---|
| Sprache: | English |
|---|
| Veröffentlicht: |
2024
|
|---|
| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
|
|---|
| Schlagworte: | Journal Article |
|---|