|
|
|
|
| LEADER |
01000caa a22002652 4500 |
| 001 |
NLM377666335 |
| 003 |
DE-627 |
| 005 |
20241107232315.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
240916s2024 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202408969
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n1593.xml
|
| 035 |
|
|
|a (DE-627)NLM377666335
|
| 035 |
|
|
|a (NLM)39279605
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Zha, Jiajia
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Electronics and Optoelectronics Based on Tellurium
|
| 264 |
|
1 |
|c 2024
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 07.11.2024
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
|
| 520 |
|
|
|a As a true 1D system, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te-centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large-scale circuits. Additionally, performance optimization strategies are discussed for Te-based field-effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a Review
|
| 650 |
|
4 |
|a electronics
|
| 650 |
|
4 |
|a optoelectronics
|
| 650 |
|
4 |
|a synthesis methods
|
| 650 |
|
4 |
|a tellurium
|
| 650 |
|
4 |
|a van der Waals materials
|
| 700 |
1 |
|
|a Dong, Dechen
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Huang, Haoxin
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Xia, Yunpeng
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Tong, Jingyi
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Liu, Handa
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Chan, Hau Ping
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Ho, Johnny C
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhao, Chunsong
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Chai, Yang
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Tan, Chaoliang
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 45 vom: 15. Nov., Seite e2408969
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:45
|g day:15
|g month:11
|g pages:e2408969
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202408969
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 36
|j 2024
|e 45
|b 15
|c 11
|h e2408969
|