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240916s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202409025
|2 doi
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|a pubmed24n1593.xml
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|a (DE-627)NLM377629987
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|a (NLM)39267409
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Huang, Jianhua
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Monolithic Integration of Full-Color Microdisplay Screen with Sub-5 µm Quantum-Dot Pixels
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 07.11.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Monolithic integration of color-conversion materials onto blue-backlight micro-light-emitting-diodes (micro-LEDs) has emerged as a promising strategy for achieving full-color microdisplay devices. However, this approach still encounters challenges such as the blue-backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.39-inch micro-display screens displaying colorful pictures and videos are demonstrated, which are enabled by creating interfacial chemical bonds for wafer-scale adhesion of sub-5 µm QD-pixels on blue-backlight micro-LED wafer. The ligand molecule with chlorosulfonyl and silane groups is selected as the synthesis ligand and surface treatment material, facilitating the preparation of high-efficiency QD photoresist and the formation of robust chemical bonds for pixel integration. This is a leading record in micro-display devices achieving the highest brightness larger than 400 thousand nits, the ultrahigh resolution of 3300 PPI, the wide color gamut of 130.4% NTSC, and the ultimate performance of service life exceeding 1000 h. These results extend the mature integrated circuit technique into the manufacture of micro-display device, which also lead the road of industrialization process of full-color micro-LEDs
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|a Journal Article
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|a color conversion
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|a display device
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4 |
|a light‐emitting‐diode
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4 |
|a micro‐LED
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4 |
|a perovskite
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| 650 |
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4 |
|a quantum dot
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| 700 |
1 |
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|a Li, Ziwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Youliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Liuli
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lin, Xiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yizhe
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yazhou
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fu, Yi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Weidong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Ming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Dong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pan, Anlian
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 45 vom: 16. Nov., Seite e2409025
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:45
|g day:16
|g month:11
|g pages:e2409025
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202409025
|3 Volltext
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