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240909s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202411211
|2 doi
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|a pubmed25n1256.xml
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|a (DE-627)NLM377333719
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|a (NLM)39246277
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Seok, Hyunho
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Electron Release via Internal Polarization Fields for Optimal S-H Bonding States
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 09.09.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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| 520 |
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|a © 2024 Wiley‐VCH GmbH.
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|a Transition metal dichalcogenides (TMDs) have received considerable attention as promising electrocatalysts for the hydrogen evolution reaction (HER), yet their potential is often constrained by the inertness of the basal planes arising from their poor hydrogen adsorption ability. Here, the relationship between the electronic structure of the WS2 basal plane and HER activity is systemically analyzed to establish a clear insight. The valance state of the sulfur atoms on the basal plane has been tuned to enhance hydrogen adsorption through sequential engineering processes, including direct phase transition and heterostructure that induces work function-difference-induced unidirectional electron transfer. Additionally, an innovative synthetic approach, harnessing the built-in internal polarization field at the W-graphene heterointerface, triggers the in-situ formation of sulfur vacancies in the bottom WSx (x < 2) layers. The resultant modulation of the valance state of the sulfur atom stabilizes the W-S bond, while destabilizing the S-H bond. The electronic structural changes are further amplified by the release and transfer of surplus electrons via sulfur vacancies, filling the valance state of W and S atoms. Consequently, this work provides a comprehensive understanding of the interplay between the electronic structure of the WS2 basal plane and the HER activity, focusing on optimizing S-H bonding state
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|a Journal Article
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|a de‐localized charge transfer
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|a electronic modulation
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|a hydrogen evolution reaction
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|a internal polarization field
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|a sulfur vacancies
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|a Kim, Minjun
|e verfasserin
|4 aut
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|a Cho, Jinill
|e verfasserin
|4 aut
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|a Son, Sihoon
|e verfasserin
|4 aut
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|a Megra, Yonas Tsegaye
|e verfasserin
|4 aut
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|a Lee, Jinhyoung
|e verfasserin
|4 aut
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|a Nam, Myeong Gyun
|e verfasserin
|4 aut
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|a Kim, Keon-Woo
|e verfasserin
|4 aut
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|a Aydin, Kubra
|e verfasserin
|4 aut
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|a Yoo, Seong Soo
|e verfasserin
|4 aut
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|a Lee, Hyeonjeong
|e verfasserin
|4 aut
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|a Kanade, Vinit K
|e verfasserin
|4 aut
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|a Kim, Muyoung
|e verfasserin
|4 aut
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|a Mun, Jihun
|e verfasserin
|4 aut
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|a Kim, Jin Kon
|e verfasserin
|4 aut
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|a Suk, Ji Won
|e verfasserin
|4 aut
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|a Kim, Hyeong-U
|e verfasserin
|4 aut
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|a Yoo, Pil J
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Taesung
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 09. Sept., Seite e2411211
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g year:2024
|g day:09
|g month:09
|g pages:e2411211
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| 856 |
4 |
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|u http://dx.doi.org/10.1002/adma.202411211
|3 Volltext
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