Supercapacitively Liquid-Solid Dual-State Optoelectronics

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 09. Sept., Seite e2406345
1. Verfasser: Guo, Qianying (VerfasserIn)
Weitere Verfasser: Ji, Daizong, Wang, Qiankun, Peng, Lan, Zhang, Cong, Wu, Yungen, Kong, Derong, Luo, Shi, Liu, Wentao, Chen, Gang, Wei, Dapeng, Liu, Yunqi, Wei, Dacheng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article microporous dual‐state interface optoelectronics phototransistor scotopic neuromorphic imaging supercapacitively photogating modulation
Beschreibung
Zusammenfassung:© 2024 Wiley‐VCH GmbH.
Photo-transduction of solid-state optoelectronics occurs in semiconductors or their interfaces. Considering the confined active area and interfacial capacitance of solid-state materials, solid-state optoelectronics faces inherent limitations in photo-transduction, especially for bionic vision, and the performance is lower than that of living systems. For example, a photoreceptor generates pA-level photocurrent when absorbing a single photon. Here, a liquid-solid dual-state phototransistor is demonstrated, in which photo-transduction and modulation take place at the microporous interface between semiconductors and water, mimicking principles of the photoreceptor. When operating in the water, an orderly stacked photo-harvesting covalent organic framework layer generates supercapacitively photogating modulation of the channel conductivity via a dual-state interface, achieving responsivity of 4.6 × 1010 A W-1 and detectivity of 1.62 × 1016 Jones at room temperature, several orders of magnitude higher than other photodetectors. Such bio-inspired dual-state optoelectronics enables high-contrast scotopic neuromorphic imaging with responsivity greater than photoreceptors, holding promise for constructing optoelectronic systems with performance beyond conventional solid-state optoelectronics
Beschreibung:Date Revised 09.09.2024
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202406345