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|a 10.1002/adma.202406145
|2 doi
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|a DE-627
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|a eng
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|a Liu, Mingquan
|e verfasserin
|4 aut
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|a Dual-Functional Interfacial Layer Enabled by Gating-Shielding Effects for Ultra-Stable Zn Anode
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 01.11.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Large-scale application of low-cost, high-safety and environment-compatible aqueous Zn metal batteries (ZMBs) is hindered by Zn dendrite failure and side reactions. Herein, highly reversible ZMBs are obtained by addition of trace D-pantothenate calcium additives to engineer a dual-functional interfacial layer, which is enabled by a bioinspired gating effect for excluding competitive free water near Zn surface due to the trapping and immobilization of water by hydroxyl groups, and guiding target Zn2+ transport across interface through carboxyl groups of pantothenate anions, as well as a dynamic electrostatic shielding effect around Zn protuberances from Ca2+ cations to ensure uniform Zn2+ deposition. In consequence, interfacial side reactions are perfectly inhibited owing to reduced water molecules reaching Zn surface, and the uniform and compact deposition of Zn2+ is achieved due to promoted Zn2+ transport and deposition kinetics. The ultra-stable symmetric cells with beyond 9000 h at 0.5 mA cm-2 with 0.5 mAh cm-2 and over 5000 h at 5 mA cm-2 with 1 mAh cm-2, and an average Coulombic efficiency of 99.8% at 1 mA cm-2 with 1 mAh cm-2, are amazingly realized. The regulated-electrolyte demonstrates high compatibility with verified cathodes for stable full cells. This work opens a brand-new pathway to regulate Zn/electrolyte interface to promise reversible ZMBs
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|a Journal Article
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|a Zn metal batteries
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|a bioinspired gating effect
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|a dynamical electrostatic shielding
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|a electrolyte additive
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|a ultra‐long cycling life
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|a Wang, Yahui
|e verfasserin
|4 aut
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|a Li, Yu
|e verfasserin
|4 aut
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|a Wu, Feng
|e verfasserin
|4 aut
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|a Li, Huanyu
|e verfasserin
|4 aut
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|a Li, Ying
|e verfasserin
|4 aut
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|a Feng, Xin
|e verfasserin
|4 aut
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|a Long, Bo
|e verfasserin
|4 aut
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|a Ni, Qiao
|e verfasserin
|4 aut
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|a Wu, Chuan
|e verfasserin
|4 aut
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|a Bai, Ying
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 44 vom: 16. Nov., Seite e2406145
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:44
|g day:16
|g month:11
|g pages:e2406145
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|u http://dx.doi.org/10.1002/adma.202406145
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