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240828s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202407249
|2 doi
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|a pubmed25n1255.xml
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|a (DE-627)NLM376818131
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|a (NLM)39194637
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Fang, Yuqiang
|e verfasserin
|4 aut
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|a Above-Room-Temperature Ferroelectricity and Giant Second Harmonic Generation in 1D vdW NbOI3
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 03.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The realization of spontaneous ferroelectricity down to the one-dimensional (1D) limit is both fundamentally intriguing and practically appealing for high-density ferroelectric and nonlinear photonics. However, the 1D vdW ferroelectric materials are not discovered experimentally yet. Here, the first 1D vdW ferroelectric compound NbOI3 with a high Curie temperature TC > 450 K and giant second harmonic generation (SHG) is reported. The 1D crystalline chain structure of the NbOI3 is revealed by cryo-electron microscopy, whereas the 1D ferroelectric order originated from the Nb displacement along the Nb-O chain (b-axis) is confirmed via obvious electrical and ferroelectric hysteresis loops. Impressively, NbOI3 exhibits a giant SHG susceptibility up to 1572 pm V-1 at a fundamental wavelength of 810 nm, and a further enhanced SHG susceptibility of 5582 pm V-1 under the applied hydrostatic pressure of 2.06 GPa. Combing in situ pressure-dependent X-ray diffraction, Raman spectra measurements, and first-principles calculations, it is demonstrated that the O atoms shift along the Nb─O atomic chain under compression, which can lead to the increased Baur distortion of [NbO2I4] octahedra, and hence induces the enhancement of SHG. This work provides a 1D vdW ferroelectric system for developing novel ferroelectronic and photonic devices
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|a Journal Article
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|a 1D vdW ferroelectric NbOI3
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|a high pressure
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|a second harmonic generation
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|a Liu, Yue
|e verfasserin
|4 aut
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1 |
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|a Yang, Niuzhuang
|e verfasserin
|4 aut
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|a Wang, Gang
|e verfasserin
|4 aut
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|a He, Wen
|e verfasserin
|4 aut
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|a Zhou, Xinyi
|e verfasserin
|4 aut
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|a Xia, Shian
|e verfasserin
|4 aut
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|a Wang, Dong
|e verfasserin
|4 aut
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|a Fu, Jierui
|e verfasserin
|4 aut
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|a Wang, Jiapeng
|e verfasserin
|4 aut
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|a Ding, Yang
|e verfasserin
|4 aut
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|a Yu, Ting
|e verfasserin
|4 aut
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|a Xu, Chengyan
|e verfasserin
|4 aut
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|a Zhen, Liang
|e verfasserin
|4 aut
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|a Lin, Junhao
|e verfasserin
|4 aut
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|a Gou, Gaoyang
|e verfasserin
|4 aut
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|a Li, Yang
|e verfasserin
|4 aut
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|a Huang, Fuqiang
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 40 vom: 10. Okt., Seite e2407249
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:36
|g year:2024
|g number:40
|g day:10
|g month:10
|g pages:e2407249
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|u http://dx.doi.org/10.1002/adma.202407249
|3 Volltext
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