Above-Room-Temperature Ferroelectricity and Giant Second Harmonic Generation in 1D vdW NbOI3

© 2024 Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 40 vom: 10. Okt., Seite e2407249
Auteur principal: Fang, Yuqiang (Auteur)
Autres auteurs: Liu, Yue, Yang, Niuzhuang, Wang, Gang, He, Wen, Zhou, Xinyi, Xia, Shian, Wang, Dong, Fu, Jierui, Wang, Jiapeng, Ding, Yang, Yu, Ting, Xu, Chengyan, Zhen, Liang, Lin, Junhao, Gou, Gaoyang, Li, Yang, Huang, Fuqiang
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article 1D vdW ferroelectric NbOI3 high pressure second harmonic generation
Description
Résumé:© 2024 Wiley‐VCH GmbH.
The realization of spontaneous ferroelectricity down to the one-dimensional (1D) limit is both fundamentally intriguing and practically appealing for high-density ferroelectric and nonlinear photonics. However, the 1D vdW ferroelectric materials are not discovered experimentally yet. Here, the first 1D vdW ferroelectric compound NbOI3 with a high Curie temperature TC > 450 K and giant second harmonic generation (SHG) is reported. The 1D crystalline chain structure of the NbOI3 is revealed by cryo-electron microscopy, whereas the 1D ferroelectric order originated from the Nb displacement along the Nb-O chain (b-axis) is confirmed via obvious electrical and ferroelectric hysteresis loops. Impressively, NbOI3 exhibits a giant SHG susceptibility up to 1572 pm V-1 at a fundamental wavelength of 810 nm, and a further enhanced SHG susceptibility of 5582 pm V-1 under the applied hydrostatic pressure of 2.06 GPa. Combing in situ pressure-dependent X-ray diffraction, Raman spectra measurements, and first-principles calculations, it is demonstrated that the O atoms shift along the Nb─O atomic chain under compression, which can lead to the increased Baur distortion of [NbO2I4] octahedra, and hence induces the enhancement of SHG. This work provides a 1D vdW ferroelectric system for developing novel ferroelectronic and photonic devices
Description:Date Revised 03.10.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202407249