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240828s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202405590
|2 doi
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|a pubmed24n1515.xml
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|a (DE-627)NLM376815620
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|a (NLM)39194389
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Zhi-Hao
|e verfasserin
|4 aut
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| 245 |
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|a Direct Observations of Spontaneous In-Plane Electronic Polarization in 2D Te Films
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 28.08.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Single-element polarization in low dimensions is fascinating for constructing next-generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low-temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry-breaking character in 2D Te gives rise to sizable in-plane polarization with accumulated charges, which is demonstrated by the reversed band-bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te-graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices
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|a Journal Article
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|a 2D elemental tellurium films
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4 |
|a band bending
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4 |
|a moiré modulations
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| 650 |
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4 |
|a scanning tunneling microscopy
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4 |
|a spontaneous electric polarization
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| 700 |
1 |
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|a Yang, Lian-Zhi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qin, Hao-Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liao, Wen-Ao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Heng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fu, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Hualing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Wenhao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fu, Ying-Shuang
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 28. Aug., Seite e2405590
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2024
|g day:28
|g month:08
|g pages:e2405590
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|u http://dx.doi.org/10.1002/adma.202405590
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
|
|
|a GBV_NLM
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| 912 |
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|a GBV_ILN_350
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| 951 |
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|a AR
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| 952 |
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|j 2024
|b 28
|c 08
|h e2405590
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