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240828s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202408963
|2 doi
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|a pubmed24n1556.xml
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|a (DE-627)NLM376815566
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|a (NLM)39194384
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|a eng
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|a Tu, Xueyang
|e verfasserin
|4 aut
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|a Ultralong K0.5Mn0.75PS3 Nanowires Tailored by K-Ion Scissors for Extraordinary Sodium-Ion Storage
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|c 2024
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 03.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a 1D layered nanowires (NWs) are expected to be excellent electrode materials due to their efficient electron/ion transport and strain/stress relaxation. However, it is a great challenge to synthesize layered NWs by a top-down synthetic route. Herein, ultralong 1D layered K0.5Mn0.75PS3 NWs (length: >100 µm; diameter: ≈300 nm) are synthesized for the first time using "K-ion chemical scissors", whose excellent sodium storage performance originates from the bifunctional structural unit, ingeniously combining the alloying energy storage functional unit (P-P dimer) with the quasi-intercalated functional unit ([MnS3]4- framework). Stress-driven K-ion scissors achieve the rapid transformation of MnPS3 bulk to K0.5Mn0.75PS3 NWs with directed tailoring. Compared to MnPS3, the NWs exhibit enlarged interlayer spacing (9.32 Å), enhanced electronic conductivity (8.17 × 10-5 S m-1 vs 4.47 × 10-10 S m-1), and high ionic conductivity (2.14 mS cm-1). As expected, the NWs demonstrate high capacity (709 mAh g-1 at 0.5 A g-1) and excellent cycling performance (≈100% capacity retention after 2500 cycles at 10 A g-1), ranking among metal thiophosphates. A quasi-topological intercalation mechanism of the NWs is revealed through further characterizations. This work expands the top-down synthesis approach and offers innovative insights for the cost-effective and large-scale fabrication of NWs with outstanding electrochemical performance
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|a Journal Article
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|a K0.5Mn0.75PS3 nanowire
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|a K‐ion chemical scissors
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|a MnPS3
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|a sodium‐ion batteries
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|a Xu, Hengyue
|e verfasserin
|4 aut
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|a Pan, Youtan
|e verfasserin
|4 aut
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|a Lv, Zhuoran
|e verfasserin
|4 aut
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|a Wang, Linlin
|e verfasserin
|4 aut
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|a Zhu, Bingyi
|e verfasserin
|4 aut
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|a Lin, Tianquan
|e verfasserin
|4 aut
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|a Bi, Hui
|e verfasserin
|4 aut
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|a Fang, Yuqiang
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Fuqiang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 40 vom: 03. Okt., Seite e2408963
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:40
|g day:03
|g month:10
|g pages:e2408963
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|u http://dx.doi.org/10.1002/adma.202408963
|3 Volltext
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