Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface : A DFT Study
Hexagonal boron nitride (h-BN) has attracted significant attention due to its exceptional properties. Among various substrates used for h-BN growth, diamond emerges as a more promising substrate due to its high-temperature resistance and superior electrical properties. To reveal the nucleation mecha...
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| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 40(2024), 36 vom: 10. Sept., Seite 19146-19154
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| 1. Verfasser: |
Xu, Hang
(VerfasserIn) |
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| Weitere Verfasser: |
Hu, Jiping,
Wang, Fang,
Qu, Yipu,
Liu, Yuhuai |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2024
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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