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240826s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202403696
|2 doi
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|a pubmed24n1513.xml
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|a (DE-627)NLM376707143
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|a (NLM)39183501
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Xie, Jin
|e verfasserin
|4 aut
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|a Critical-Layered MoS2 for the Enhancement of Supercontinuum Generation in Photonic Crystal Fibre
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 26.08.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Supercontinuum generation (SCG) from silica-based photonic crystal fibers (PCFs) is of highly technological significance from microscopy to metrology, but has been hindered by silica's relatively low intrinsic optical nonlinearity. The prevailing approaches of filling PCF with nonlinear gases or liquids can endow fibre with enhanced optical nonlinearity and boosted SCG efficiency, yet these hybrids are easily plagued by fusion complexity, environmental incompatibility or transmission mode instability. Here this work presents a strategy of embedding solid-state 2D MoS2 atomic layers into the air-holes of PCF to efficiently enhance SCG. This work demonstrates a 4.8 times enhancement of the nonlinear coefficient and a 70% reduction of the threshold power for SCG with one octave spanning in the MoS2-PCF hybrid. Furthermore, this work finds that the SCG enhancement is highly layer-dependent, which only manifests for a real 2D regime within the thickness of five atomic layers. Theoretical calculations reveal that the critical thickness arises from the trade-off among the layer-dependent enhancement of the nonlinear coefficient, leakage of fundamental mode and redshift of zero-dispersion wavelength. This work provides significant advances toward efficient SCG, and highlights the importance of matching an appropriate atomic layer number in the design of functional 2D material optical fibers
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|a Journal Article
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|a 2D materials
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|a nonlinear optics
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|a optical fiber
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|a supercontinuum generation
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|a Cheng, Xu
|e verfasserin
|4 aut
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|a Xue, Guodong
|e verfasserin
|4 aut
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| 700 |
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|a Li, Xiao
|e verfasserin
|4 aut
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|a Zhong, Ding
|e verfasserin
|4 aut
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|a Yu, Wentao
|e verfasserin
|4 aut
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|a Zuo, Yonggang
|e verfasserin
|4 aut
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|a Liu, Chang
|e verfasserin
|4 aut
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| 700 |
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|a Lin, Kaifeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Can
|e verfasserin
|4 aut
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| 700 |
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|a Pang, Meng
|e verfasserin
|4 aut
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| 700 |
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|a Jiang, Xin
|e verfasserin
|4 aut
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| 700 |
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|a Sun, Zhipei
|e verfasserin
|4 aut
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| 700 |
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|a Kang, Zhe
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hong, Hao
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Kaihui
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Zhongfan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 25. Aug., Seite e2403696
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2024
|g day:25
|g month:08
|g pages:e2403696
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|u http://dx.doi.org/10.1002/adma.202403696
|3 Volltext
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