Nitrogen-Doped Indium Oxide Electrochemical Sensor for Stable and Selective NO2 Detection

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 41 vom: 19. Okt., Seite e2409294
1. Verfasser: Mo, Xichao (VerfasserIn)
Weitere Verfasser: Zhu, Chonghui, Zhang, Zhaorui, Yan, Xiaohui, Han, Chenshuai, Li, Jiaxin, Attfield, J Paul, Yang, Minghui
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electrochemical gas sensor nitriding selectivity stability
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520 |a Efficient gas sensors are critical for environmental monitoring and industrial safety. While metal oxide semiconductor (MOS) sensors are cost-effective, they struggle with poor selectivity, high operating temperatures, and limited stability. Electrochemical sensors, though selective and energy-efficient, face high costs, and stability issues due to precious metal catalysts like platinum on carbon (Pt/C). Herein, a novel, cost-effective electrochemical sensor using nitrogen-doped indium oxide In2O3- xN2 x /3Vx /3 (0.01≤x≤0.14), synthesized with varying nitriding times is presented. The optimized In2O3 N-40 min sensor demonstrates a remarkable response current of 771 nA to 10 ppm nitrogen dioxide (NO2) at ambient temperature, with outstanding long-term stability (over 30 days) and rapid response/recovery times (5/16 s). Compared to Pt/C sensors, it shows 84% and 67% reductions in response and recovery times, respectively, and maintains 98% performance after a month, versus 68% for Pt/C. This cost-effective sensor presents a promising alternative for electrochemical gas sensing, eliminating the need for precious metal catalysts 
650 4 |a Journal Article 
650 4 |a electrochemical 
650 4 |a gas sensor 
650 4 |a nitriding 
650 4 |a selectivity 
650 4 |a stability 
700 1 |a Zhu, Chonghui  |e verfasserin  |4 aut 
700 1 |a Zhang, Zhaorui  |e verfasserin  |4 aut 
700 1 |a Yan, Xiaohui  |e verfasserin  |4 aut 
700 1 |a Han, Chenshuai  |e verfasserin  |4 aut 
700 1 |a Li, Jiaxin  |e verfasserin  |4 aut 
700 1 |a Attfield, J Paul  |e verfasserin  |4 aut 
700 1 |a Yang, Minghui  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 41 vom: 19. Okt., Seite e2409294  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:41  |g day:19  |g month:10  |g pages:e2409294 
856 4 0 |u http://dx.doi.org/10.1002/adma.202409294  |3 Volltext 
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