Sensitive SWIR Organic Photodetectors with Spectral Response Reaching 1.5 µm

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 41 vom: 17. Okt., Seite e2406950
1. Verfasser: Zhang, Yi (VerfasserIn)
Weitere Verfasser: Chen, Jingwen, Yang, Jie, Fu, Muyi, Cao, Yunhao, Dong, Minghao, Yu, Jiangkai, Dong, Sheng, Yang, Xiye, Shao, Lin, Hu, Zhengwei, Cai, Houji, Liu, Chunchen, Huang, Fei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article bathochromic shift high‐detectivity non‐fullerene acceptor organic photodetector short‐wavelength infrared region
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520 |a The performance of organic photodetectors (OPDs) sensitive to the short-wavelength infrared (SWIR) light lags behind commercial indium gallium arsenide (InGaAs) photodetectors primarily due to the scarcity of organic semiconductors with efficient photoelectric responses exceeding 1.3 µm. Limited by the Energy-gap law, ultralow-bandgap organic semiconductors usually suffer from severe non-radiative transitions, resulting in low external quantum efficiency (EQE). Herein, a difluoro-substituted quinoid terminal group (QC-2F) with exceptionally strong electron-negativity is developed for constructing a new non-fullerene acceptor (NFA), Y-QC4F with an ultralow bandgap of 0.83 eV. This subtle structural modification significantly enhances intermolecular packing order and density, enabling an absorption onset up to 1.5 µm while suppressing non-radiation recombination in Y-QC4F films. SWIR OPDs based on Y-QC4F achieve an impressive detectivity (D*) over 1011 Jones from 0.4 to 1.5 µm under 0 V bias, with a maximum of 1.68 × 1012 Jones at 1.16 µm. Furthermore, the resulting OPDs demonstrate competitive performance with commercial photodetectors for high-quality SWIR imaging even under 1.4 µm irradiation 
650 4 |a Journal Article 
650 4 |a bathochromic shift 
650 4 |a high‐detectivity 
650 4 |a non‐fullerene acceptor 
650 4 |a organic photodetector 
650 4 |a short‐wavelength infrared region 
700 1 |a Chen, Jingwen  |e verfasserin  |4 aut 
700 1 |a Yang, Jie  |e verfasserin  |4 aut 
700 1 |a Fu, Muyi  |e verfasserin  |4 aut 
700 1 |a Cao, Yunhao  |e verfasserin  |4 aut 
700 1 |a Dong, Minghao  |e verfasserin  |4 aut 
700 1 |a Yu, Jiangkai  |e verfasserin  |4 aut 
700 1 |a Dong, Sheng  |e verfasserin  |4 aut 
700 1 |a Yang, Xiye  |e verfasserin  |4 aut 
700 1 |a Shao, Lin  |e verfasserin  |4 aut 
700 1 |a Hu, Zhengwei  |e verfasserin  |4 aut 
700 1 |a Cai, Houji  |e verfasserin  |4 aut 
700 1 |a Liu, Chunchen  |e verfasserin  |4 aut 
700 1 |a Huang, Fei  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 41 vom: 17. Okt., Seite e2406950  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:36  |g year:2024  |g number:41  |g day:17  |g month:10  |g pages:e2406950 
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