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240816s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202404923
|2 doi
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|a pubmed25n1253.xml
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|a (NLM)39149776
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Chenyang
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 04.01.2025
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic-edge guided epitaxy and van der Waals epitaxy. Low-concentration sulfur condition preserves O/Al-terminated step edges, fostering atomic-edge epitaxy, while high-concentration sulfur leads to S-terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic-level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single-crystal 2D materials on a wafer scale
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|a Journal Article
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|a chemical vapor deposition
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|a molybdenum disulfide
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|a orientation control
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|a sapphire substrate
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4 |
|a surface reconstruction
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| 700 |
1 |
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|a Zheng, Fangyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Min, Jiacheng
|e verfasserin
|4 aut
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|a Yang, Ni
|e verfasserin
|4 aut
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1 |
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|a Chang, Yu-Ming
|e verfasserin
|4 aut
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|a Liu, Haomin
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Yuxiang
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Pengfei
|e verfasserin
|4 aut
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| 700 |
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|a Yu, Qinze
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Zhengtang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Aljarb, Areej
|e verfasserin
|4 aut
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1 |
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|a Shih, Kaimin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Jing-Kai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Lain-Jong
|e verfasserin
|4 aut
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| 700 |
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|a Wan, Yi
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 51 vom: 28. Dez., Seite e2404923
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:36
|g year:2024
|g number:51
|g day:28
|g month:12
|g pages:e2404923
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202404923
|3 Volltext
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