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240816s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202402053
|2 doi
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|a pubmed24n1563.xml
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|a (DE-627)NLM376356081
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|a (NLM)39148282
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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|a Lee, Minwoo
|e verfasserin
|4 aut
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|a Highly Efficient Wide Bandgap Perovskite Solar Cells With Tunneling Junction by Self-Assembled 2D Dielectric Layer
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 10.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a Reducing non-radiative recombination and addressing band alignment mismatches at interfaces remain major challenges in achieving high-performance wide-bandgap perovskite solar cells. This study proposes the self-organization of a thin two-dimensional (2D) perovskite BA2PbBr4 layer beneath a wide-bandgap three-dimensional (3D) perovskite Cs0.17FA0.83Pb(I0.6Br0.4)3, forming a 2D/3D bilayer structure on a tin oxide (SnO2) layer. This process is driven by interactions between the oxygen vacancies on the SnO2 surface and hydrogen atoms of the n-butylammonium cation, aiding the self-assembly of the BA2PbBr4 2D layer. The 2D perovskite acts as a tunneling layer between SnO2 and the 3D perovskite, neutralizing the energy level mismatch and reducing non-radiative recombination. This results in high power conversion efficiencies of 21.54% and 19.16% for wide-bandgap perovskite solar cells with bandgaps of 1.7 and 1.8 eV, with open-circuit voltages over 1.3 V under 1-Sun illumination. Furthermore, an impressive efficiency of over 43% is achieved under indoor conditions, specifically under 200 lux white light-emitting diode light, yielding an output voltage exceeding 1 V. The device also demonstrates enhanced stability, lasting up to 1,200 hours
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|a Journal Article
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|a 2D perovskite
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|a indoor perovskite solar cells
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|a tunneling effect
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|a wide bandgap
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|a Lim, Jihoo
|e verfasserin
|4 aut
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|a Choi, Eunyoung
|e verfasserin
|4 aut
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|a Soufiani, Arman Mahboubi
|e verfasserin
|4 aut
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|a Lee, Seungmin
|e verfasserin
|4 aut
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|a Ma, Fa-Jun
|e verfasserin
|4 aut
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|a Lim, Sean
|e verfasserin
|4 aut
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|a Seidel, Jan
|e verfasserin
|4 aut
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|a Seo, Dong Han
|e verfasserin
|4 aut
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|a Park, Ji-Sang
|e verfasserin
|4 aut
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|a Lee, Wonjong
|e verfasserin
|4 aut
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|a Lim, Jongchul
|e verfasserin
|4 aut
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|a Webster, Richard Francis
|e verfasserin
|4 aut
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|a Kim, Jincheol
|e verfasserin
|4 aut
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|a Wang, Danyang
|e verfasserin
|4 aut
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|a Green, Martin A
|e verfasserin
|4 aut
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|a Kim, Dohyung
|e verfasserin
|4 aut
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|a Noh, Jun Hong
|e verfasserin
|4 aut
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|a Hao, Xiaojing
|e verfasserin
|4 aut
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|a Yun, Jae Sung
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 41 vom: 16. Okt., Seite e2402053
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:41
|g day:16
|g month:10
|g pages:e2402053
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|u http://dx.doi.org/10.1002/adma.202402053
|3 Volltext
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|d 36
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|e 41
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