The high electron mobility for spin-down channel of two-dimensional spin-polarized half-metallic ferromagnetic EuSi2N4 monolayer

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Détails bibliographiques
Publié dans:Journal of computational chemistry. - 1984. - 45(2024), 31 vom: 05. Dez., Seite 2678-2689
Auteur principal: Zhang, Bo (Auteur)
Autres auteurs: Wang, Huai-Qian, Li, Hui-Fang, Zheng, Hao, Zhang, Yong-Hang, Mei, Xun-Jie, Zhang, Jia-Ming, Jiang, Kai-Le, Jiang, Qing-Wei
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Journal of computational chemistry
Sujets:Journal Article carrier mobility density functional theory half‐metallic ferromagnetic material indirect bandgap semiconductor two‐dimensional material