Characterizing electron-collecting CdTe for use in a 77 ns burst-rate imager

open access.

Bibliographische Detailangaben
Veröffentlicht in:Journal of synchrotron radiation. - 1994. - 31(2024), Pt 5 vom: 01. Sept., Seite 1217-1223
1. Verfasser: Franklin, Lena A (VerfasserIn)
Weitere Verfasser: Brown, Nicholas J, Gruner, Sol M, Met-Hoxha, Elida, Tate, Mark W, Thom-Levy, Julia
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Journal of synchrotron radiation
Schlagworte:Journal Article X-ray detector cadmium telluride high-Z sensor pixel array detector
LEADER 01000caa a22002652 4500
001 NLM375980660
003 DE-627
005 20240905233010.0
007 cr uuu---uuuuu
008 240808s2024 xx |||||o 00| ||eng c
024 7 |a 10.1107/S160057752400643X  |2 doi 
028 5 2 |a pubmed24n1524.xml 
035 |a (DE-627)NLM375980660 
035 |a (NLM)39110677 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Franklin, Lena A  |e verfasserin  |4 aut 
245 1 0 |a Characterizing electron-collecting CdTe for use in a 77 ns burst-rate imager 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 05.09.2024 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a open access. 
520 |a The Keck-PAD (pixel array detector) was developed at Cornell as a burst-rate imager capable of recording images from successive electron bunches (153 ns period) from the Advanced Photon Source (APS). Both Si and hole-collecting Schottky CdTe have been successfully bonded to this ASIC (application-specific integrated circuit) and used with this frame rate. The facility upgrades at the APS will lower the bunch period to 77 ns, which will require modifications to the Keck-PAD electronics to image properly at this reduced period. In addition, operation at high X-ray energies will require a different sensor material having a shorter charge collection time. For the target energy of 40 keV for this project, simulations have shown that electron-collecting CdTe should allow >90% charge collection within 35 ns. This collection time will be sufficient to sample the signal from one frame and prepare for the next. 750 µm-thick electron-collecting Schottky CdTe has been obtained from Acrorad and bonded to two different charge-integrating ASICs developed at Cornell, the Keck-PAD and the CU-APS-PAD. Carrier mobility has been investigated using the detector response to single X-ray bunches at the Cornell High Energy Synchrotron Source and to a pulsed optical laser. The tests indicate that the collection time will meet the requirements for 77 ns imaging 
650 4 |a Journal Article 
650 4 |a X-ray detector 
650 4 |a cadmium telluride 
650 4 |a high-Z sensor 
650 4 |a pixel array detector 
700 1 |a Brown, Nicholas J  |e verfasserin  |4 aut 
700 1 |a Gruner, Sol M  |e verfasserin  |4 aut 
700 1 |a Met-Hoxha, Elida  |e verfasserin  |4 aut 
700 1 |a Tate, Mark W  |e verfasserin  |4 aut 
700 1 |a Thom-Levy, Julia  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Journal of synchrotron radiation  |d 1994  |g 31(2024), Pt 5 vom: 01. Sept., Seite 1217-1223  |w (DE-627)NLM09824129X  |x 1600-5775  |7 nnns 
773 1 8 |g volume:31  |g year:2024  |g number:Pt 5  |g day:01  |g month:09  |g pages:1217-1223 
856 4 0 |u http://dx.doi.org/10.1107/S160057752400643X  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_40 
912 |a GBV_ILN_350 
912 |a GBV_ILN_2005 
951 |a AR 
952 |d 31  |j 2024  |e Pt 5  |b 01  |c 09  |h 1217-1223